Explicit examples of DIM constraints for network matrix models

Dotsenko-Fateev and Chern-Simons matrix models, which describe Nekrasov functions for SYM theories in different dimensions, are all incorporated into network matrix models with the hidden Ding-Iohara-Miki (DIM) symmetry. This lifting is especially simple for what we call balanced networks. Then, the Ward identities (known under the names of Virasoro/W-constraints or loop equations or regularity condition for qq-characters) are also promoted to the DIM level, where they all become corollaries of a single identity.Comment: 46 page

Spectral Duality Between Heisenberg Chain and Gaudin Model

In our recent paper we described relationships between integrable systems inspired by the AGT conjecture. On the gauge theory side an integrable spin chain naturally emerges while on the conformal field theory side one obtains some special reduced Gaudin model. Two types of integrable systems were shown to be related by the spectral duality. In this paper we extend the spectral duality to the case of higher spin chains. It is proved that the N-site GL(k) Heisenberg chain is dual to the special reduced k+2-points gl(N) Gaudin model. Moreover, we construct an explicit Poisson map between the models at the classical level by performing the Dirac reduction procedure and applying the AHH duality transformation.Comment: 36 page

Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture

A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves

Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture

Abstract A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.</p

Effect of PLD growth conditions on the structural and ferroelectric properties of perovskite thin films

Ultrathin ferroelectric (FE) films have recently got much attention in the context of the non-volatile memory devices. Over the last decade, the rapidly improving expertise in the fabrication of the structurally perfect complex oxide FE layers have led to the fabrication of heterostructures with intriguing physical and functional properties. In particular, ultrathin heteroepitaxial BaTiO3 (BTO) films have been utilized as a storage medium in the FE tunnel junctions [1], and exhibited giant bulk photovoltaic effect [2]. Pulsed Laser Deposition (PLD) has recently emerged as an excellent tool to grow epitaxial oxide heterostructures, particularly comprising ultrathin FE BTO and SrTiO3 (STO) layers. In this work, we report on the effect of PLD growth conditions of BTO and STO on MgO and Si substrates on their structural and FE properties. We show that the structural properties of the oxide layer strongly depends on a precise control over the partial O2 pressure in the growth chamber, substrate temperature and laser ablation parameters. The structure of 3-100 nm PLD grown layers was monitored in situ by RHEED, and further analyzed ex situ by XRD, XRR, AFM and TEM. The ferroelectric properties were investigated by piezoresponse force microscopy. BTO and STO thin films grown at the optimized conditions are monodomain ferroelectrics with the polarization direction perpendicular to the substrate. 1. A. Zenkevich et al. APL 102 062907 (2013). 2. A. Zenkevich et al. PRB 90 161409 (2014

Effect of PLD growth conditions on the structural and ferroelectric properties of perovskite thin films

Ultrathin ferroelectric (FE) films have recently got much attention in the context of the non-volatile memory devices. Over the last decade, the rapidly improving expertise in the fabrication of the structurally perfect complex oxide FE layers have led to the fabrication of heterostructures with intriguing physical and functional properties. In particular, ultrathin heteroepitaxial BaTiO3 (BTO) films have been utilized as a storage medium in the FE tunnel junctions [1], and exhibited giant bulk photovoltaic effect [2]. Pulsed Laser Deposition (PLD) has recently emerged as an excellent tool to grow epitaxial oxide heterostructures, particularly comprising ultrathin FE BTO and SrTiO3 (STO) layers. In this work, we report on the effect of PLD growth conditions of BTO and STO on MgO and Si substrates on their structural and FE properties. We show that the structural properties of the oxide layer strongly depends on a precise control over the partial O2 pressure in the growth chamber, substrate temperature and laser ablation parameters. The structure of 3-100 nm PLD grown layers was monitored in situ by RHEED, and further analyzed ex situ by XRD, XRR, AFM and TEM. The ferroelectric properties were investigated by piezoresponse force microscopy. BTO and STO thin films grown at the optimized conditions are monodomain ferroelectrics with the polarization direction perpendicular to the substrate. 1. A. Zenkevich et al. APL 102 062907 (2013). 2. A. Zenkevich et al. PRB 90 161409 (2014