Thermal excitation of Trivelpiece-Gould modes in a pure electron plasma

Thermally excited plasma modes are observed in trapped, near-thermal-equilibrium pure electron plasmas over a temperature range of 0.05<T<5 eV. The measured thermal emission spectra together with a separate measurement of the wave absorption coefficient uniquely determines the temperature. Alternately, kinetic theory including the antenna geometry and the measured mode damping (i.e. spectral width) gives the plasma impedance, obviating the reflection measurement. This non-destructive temperature diagnostic agrees well with standard diagnostics, and may be useful for expensive species such as anti-matter

Surface Studies of Oxidation of a Single-Grain Quasicrystal

We have used Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) to characterize the surface properties of a single-grain Al70Pd21Mn9 (APM) quasicrystal (QC) upon oxidation. When oxygen is adsorbed on this surface, a disordered layer is formed at low coverages. This chemisorbed oxygen destroys the five-fold quasiperiodicity completely. Further adsorption of oxygen leads to a thin layer (less than 20 A) of AI oxide which passivates the surface. At elevated temperatures (870 K), adsorption of oxygen induces an enrichment of AI on the surface. This is explained by the exothermicity of its oxide and the possibility of increased mobility of AI at higher temperatures. Al is the only element in this QC which can be oxidized. No evidence of oxidization for Pd and Mn is observed

Photoelectron spectra of an Al70Pd21Mn9 quasicrystal and the cubic alloy Al60Pd25Mn15

Photoelectron spectra of a fivefold quasicrystalline alloy Al70Pd21Mn9 and a related cubic alloy Al60Pd25Mn15 reveal two noteworthy features. The first is that the Pd 3dlines fall at binding energies which are 2.2 eV higher than in pure Pd. A similar shift is observed for Pd in other alloys. The second noteworthy feature is that the Mn 2p3/2 line is very sharp in the quasicrystal. Fitting the experimental peaks with a Doniach-Sunjic line shpae suggests that the position and density of Mn states near EFis very sensitive to the structural and/or chemical environment of Mn in the alloys, and that this accounts for the shape of the 2p3/2 Mn line. The sharpness of the Mn line may be a fingerprint of the quasicrystalline phase within the AlPdMn family

Fe−3s core-level splitting and local magnetism in Fe2VAl

X-ray and soft x-ray photoelectron spectra were taken on Fe2VAl samples. The Fe−3s spectra show a shoulder on the higher binding energy side of the main peak, split by ≈4.7 eV. Based on current understanding of core-level multiplet splitting in transition-metal compounds, we believe this is direct evidence of a local moment in Fe2VAl

Room Temperature Oxidation of Al-Cu-Fe and Al-Cu-Fe-Cr Quasicrystals

We have investigated formation of oxides on quasicrystalline and crystalline alloy surfaces of similar composition, in different oxidizing environments. This includes a comparison between a quaternary orthorhombic approximate of Al-Cu-Fe-Cr quasicrystal and the ternary Al-Cu-Fe quasicrystalline and crystalline phases. We noted that each sample showed the following common trends: preferential oxidation of the Al, enrichment in the concentration of Al present at the surface upon oxidation, water concentration is directly related to oxide thickness, and the oxide thickness displays a strong correlation with the bulk concentration of Al in the sample

Copper Layers Deposited on Aluminum by Galvanic Displacement

Metallization layers nanometers to tens of nanometers thick are desirable for semiconductor interconnects, among other technologically relevant nanostructures. Whereas aqueous deposition of such films is economically attractive, fabrication of continuous layers is particularly challenging on oxidized substrates used in many applications. Here it is demonstrated that galvanic displacement can deposit thin adherent copper layers on aluminum foils and thin films from alkaline copper sulfate baths. According to scanning electron microscopy and quartz crystal microbalance measurements, the use of relatively low CuSO4 concentrations produced films composed of copper nanoparticles overlying a uniform continuous copper layer on the order of nanometers in thickness. It seems that there are no precedents for such thin layers formed by aqueous deposition on oxidized metals. The thin copper layers are explained by a mechanism in which copper ions are reduced by surface aluminum hydride on Al during alkaline dissolution

Microstructure evolution of Al–Mg–B thin films by thermal annealing

The growth of Al–Mg–B thin films on SiO2/Si(100) substrates was performed by nanosecond pulsed laser deposition at three different substrate temperatures (300 K, 573 K, and 873 K). The as-deposited films were then annealed at 1173 K or 1273 K for 2 h. X-ray photoelectron spectroscopy,x-ray diffraction(XRD), and atomic force microscope were employed to investigate the effects of processing conditions on the composition, microstructure evolution, and surface morphology of the Al–Mg–B films. The substrate temperatures were found to affect the composition of as-deposited films in that the Mg content decreases and C content increases at higher substrate temperatures, in particular for the 873 K-deposited film.XRD results show that the as-deposited films were amorphous, and this structure may be stable up to 1173 K. Annealing at 1273 K was found to fully crystallize the room temperature and 573 K-deposited Al–Mg–B films with the formation of the polycrystalline orthorhombic AlMgB14 phase, accompanied by the development of a pronounced (011) preferred orientation. Nevertheless, high C incorporation in the 873 K-deposited Al–Mg–B film inhibits the crystallization and the amorphous structure remains stable even during 1273 K annealing. The presence of Si in the room-temperature-deposited 1273 K-annealed film due to the interdiffusion between the substrate and film leads to the formation of an additional tetragonal α-FeSi2 phase, which is thought to cause the surface cracking and microstructural instability observed in this film