16 research outputs found
Nanoscale Science and Technology for Electronics, Photonics and Renewable Energy Applications: Selected Papers from NGC2009 & CSTC2009 conference (http://asdn.net/ngc2009/)
On the Chemical Origin of the Gap Bowing in (GaAs)1−xGe2x Alloys: A Combined DFT–QSGW Study
Motivated by the research and analysis of new materials for photovoltaics and by the possibility of tailoring their optical properties for improved solar energy conversion, we have focused our attention on the (GaAs)1−xGe2x series of alloys. We have investigated the structural properties of some (GaAs)1−xGe2x compounds within the local-density approximation to density-functional theory, and their optical properties within the Quasiparticle Self-consistent GW approximation. The QSGW results confirm the experimental evidence of asymmetric bandgap bowing. It is explained in terms of violations of the octet rule, as well as in terms of the order–disorder phase transition
Nanoscale applications for information and energy systems
This book presents nanotechnology fundamentals and applications in the key research areas of information technology and solar energy: plasmonics, photovoltaics, transparent conducting electrodes, silicon electroplating, and resistive switching
Theoretical Prediction of 2,4,6-Trinitro-1,3,5-triazine (TNTA). A New, Powerful, High-Energy Density Material?
On the Mechanism of Silicon Nitride Chemical Vapor Deposition from Dichlorosilane and Ammonia
Ab initio MO study of diverse Si<SUB>3</SUB>H<SUB>3</SUB><SUP>+</SUP> isomers
Structures and energies of many Si3H3+ isomers were investigated theoretically at the MP2/6-31G∗ level. The global minimum was the classical aromatic planar D3h structure (5). Isodesmic equations indicate the resonance stabilization energy to be half that of the analogous cyclopropenyl cation. The next lowest energy minimum, with a divalent silicon and a bridging hydrogen, also exhibits the 2π aromaticity. Five planar Si3H3+ isomers display cyclic three-center-two-electron (3c-2e) delocalization, and eight minima have 3c-2e Si-H-Si bridged bonds. The planar tetracoordinated silicon and five-coordinated silicon also are represented. Eleven other minima were found within a 46 kcal/mol range. An H-bridged C3v structure, derived from B3H6+, is 42.1 kcal/mol above the global minimum. However, for Ge, Sn, and Pb these A3H3+ forms are more stable than the classical structures (5, J. Am. Chem. Soc. 1995, 117, 11361). In contrast to Si3H3+, C3H3+ has only four isomers in the 189 kcal/mol range. The silicon analogues of the C3H3+ acyclic structures, the prop-2-en-1-yl-3-ylidene cation and the 1-propynyl cation, are not favorable