On silicon nanobubbles in space for scattering and interception of solar radiation to ease high-temperature induced climate change

A thin film of silicon-based nanobubbles was recently suggested that could block a fraction of the sun’s radiation to alleviate the present climate crisis. But detailed information is limited to the composition, architecture, fabrication, and optical properties of the film. We examine here the optical response of Si nanobubbles in the range of 300–1000 nm to evaluate the feasibility using semi numerical solution of Maxwell’s equations, following the Mie and finite-difference time-domain procedures. We analyzed a variety of bubble sizes, thicknesses, and configurations. The calculations yield resonance scattering spectra, intensities, and field distributions. We also analyzed some many-body effects using doublets of bubbles. We show, due to high valence electron density, silicon exhibits strong polarization/plasmonic resonance scattering and absorption enhancements over the geometrical factor, which afford lighter but more efficient interception with a wide band neutral density filtering across the relevant solar light spectrum. We show that it is sufficient to use a sub monolayer raft with ∼0.75% coverage, consisting of thin (∼15 nm) but large silicon nanobubbles (∼550 nm diameter), to achieve 1.8% blockage of solar light with neutral density filtering, and ∼0.78 mg/m2 silicon, much less than the mass effective limit set earlier at 1.5 g/m2. We evaluated solid counterpart nanoparticles, which may be produced in blowing/inflation procedures of molten silicon, as well as aging by including silicon oxide capping. The studies confirm the feasibility of a space bubble filtering raft, with insignificant imbalance of the correlated color temperature (CCT) and color rendering index characteristics of sunlight

Performance of planar heterojunction perovskite solar cells under light concentration

In this work, we present 2D simulation of planar heterojunction perovskite solar cells under high concentration using physics-based TCAD. The performance of planar perovskite heterojunction solar cells is examined up to 1000 suns. We analyze the effect of HTM mobility and band structure, surface recombination velocities at interfaces and the effect of series resistance under concentrated light. The simulation results revealed that the low mobility of HTM material limits the improvement in power conversation efficiency of perovskite solar cells under concentration. In addition, large band offset at perovskite/HTM interface contributes to the high series resistance. Moreover, losses due to high surface recombination at interfaces and the high series resistance deteriorate significantly the performance of perovskite solar cells under concentration

Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design

Si solar cells with a SiGe graded buffer on top are fabricated as the initial step in GaAsP/Si tandem cell fabrication. Using this structure, the impact of the SiGe buffer layer on the Si solar cells is characterized. To mitigate the impact of the narrow-bandgap SiGe on the electrical and optical characteristics of the Si sub-cell, a portion of the underlying Si is exposed using a step-cell design. The step-cell design is demonstrated to increase the Jsc of the SiGe/Si stack from 5 to 20 mA/cm2. The layout of the top mesa is shown to have an impact on the device characteristics with the finger design giving better results than the rectangular mesa with respect to fill factor and series resistance. In addition, utilizing the step-cell design increases overall spectral response of the bottom cell, with significant improvements in the short wavelength range

Structural characterization of electric-field assisted dip-coating of gold nanoparticles on silicon

We report the effect of applying an electric field on the surface coverage of 40nm gold colloidal nanoparticles on silicon wafer using dip-coating and electrochemical cell set up. By applying electric field during the dip-coating of silicon wafer in a solution of gold nano particles (GNP) the surface coverage increased by 10% when the electric field varied from 5V/cm to 25V/cm at fixed deposition time of 90s. Ultra High Resolution Scanning Electron Microscopy (HRSEM) images shows that the particle agglomeration becomes more noticeable at higher electric field and as the deposition time increases from 90 s to 20 min a thin film of gold is achieved. Moreover, the results are discussed in terms of chemical bonding, electrostatic force and electrophoretic mobility of Au nano particles during the electric field enhanced deposition on the Si surface. Applied voltage, time of dipping, concentration of the aqueous solution, and particles zeta potential are all can be controlled to enhance the uniformity and particles profile on the silicon surface