Time-domain simulation of the full hydrodynamic model

A simple upwind discretization of the highly coupled non-linear differential equations which define the hydrodynamic model for semiconductors is given in full detail. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of opto- and microelectronics. A silicon $n^+ - n - n^+$ - structure is simulated, using the energy-balance model and the full hydrodynamic model. Results for stationary cases are then compared, and it is pointed out where the energy-balance model, which is implemented in most of today's commercial semiconductor device simulators, fails to describe accurately the electron dynamics. Additionally, a GaAs $n^+ - n - n^+$-structure is simulated in time-domain in order to illustrate the importance of inertia effects at high frequencies in modern submicron devices.Comment: 15 pages, 8 figures, prepared using jnmauth.cl

A novel EBG structure to improve isolation in MIMO antenna

25th Signal Processing and Communications Applications Conference, SIU 2017 -- 15 May 2017 through 18 May 2017 -- 128703A new, and advanced Electromagnetic Band Gap (EBG) structure is reported to reduce the mutual coupling between two tightly spaced rectangular patch antennas. The EBG structure provides more than 20 dB reduction in mutual coupling without degrading far-field patterns, gain, or bandwidth.IEEE Antennas & Propagation SocietyInstitute of Electrical and Electronics Engineers Inc.Ultra Safe Nuclear Corporatio

Bias and Geometrical Effects on Optically Controlled MESFETs

A detailed characterization of the optical response of illuminated MESFETs due to several operating and geometrical conditions is presented. The characterization targets important optical performance factors including terminal photocurrent peak value and discharge time. A figure-of-merit is defined to quantify the overall response to these effects. The simulation results should be very useful in device operation and optimization

Bias and Geometrical Effects on Optically Controlled MESFETs

A detailed characterization of the optical response of illuminated MESFETs due to several operating and geometrical conditions is presented. The characterization targets important optical performance factors including terminal photocurrent peak value and discharge time. A figure-of-merit is defined to quantify the overall response to these effects. The simulation results should be very useful in device operation and optimization

Microwave performance of optically controlled MESFETs

This paper presents the characterization of illuminated high-frequency active devices using a time domain physical simulation model. The model is based on Boltzmann's Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. The calculated y-parameters of the device show the profound effect of illumination on the microwave characteristics. These findings make the model an important tool for the design of active devices under illumination control

Microwave performance of optically controlled MESFETs

This paper presents the characterization of illuminated high-frequency active devices using a time domain physical simulation model. The model is based on Boltzmann's Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. The calculated y-parameters of the device show the profound effect of illumination on the microwave characteristics. These findings make the model an important tool for the design of active devices under illumination control

A time-domain algorithm for the analysis of second-harmonicgeneration in nonlinear optical structures

A time-domain simulator of integrated optical structures containing second-order nonlinearities is presented. The simulation algorithm is based on nonlinear wave equations representing the propagating fields and is solved using the finite-difference time-domain method. The simulation results for a continuous-wave operation are compared with beam propagation method simulations showing excellent agreement for the particular examples considered. Because the proposed algorithm does not suffer from the inaccuracies associated with the paraxial approximation, it should find application in a wide range of device structures and in the analysis of short-pulse propagation in second-order nonlinear device