Mapping the Diffusion Tensor in Microstructured Perovskites

Understanding energy transport in semiconductors is critical for design of electronic and optoelectronic devices. Semiconductor material properties such as charge carrier mobility or diffusion length are measured in bulk crystals and determined using models that describe transport behavior in homogeneous media, where structural boundary effects are minimal. However, most emerging semiconductors exhibit microscale heterogeneity. Therefore, experimental techniques with high spatial resolution paired with models that capture anisotropy and domain boundary behavior are needed. We develop a diffusion tensor-based framework to analyze experimental photoluminescence (PL) diffusion maps accounting for material microstructure. Specifically, we quantify both carrier transport and recombination in single crystal and polycrystalline lead halide perovskites by globally fitting diffusion maps, with spatial, temporal, and PL intensity data. We reveal a 29% difference in principal diffusion coefficients and alignment between electronically coupled grains for CH3NH3PbI3 polycrystalline films. This framework allows for understanding and optimizing anisotropic energy transport in heterogeneous materials.Comment: 47 pages, 19 figure

22.8%-Efficient Single-Crystal Mixed-Cation Inverted Perovskite Solar Cells with a Near-Optimal Bandgap

Expanding the near-infrared (NIR) response of perovskite materials to approach the ideal bandgap range (1.1-1.4 eV) for single-junction solar cells is an attractive step to unleash the full potential of...</p