Galactica, a digital planetarium that explores the solar system and the milky way

This paper describes a new Digital Planetarium system that allows interactive visualization of astrophysical data and phenomena in an immersive virtual reality (VR) setting. Taking advantage of the Cave Hollowspace at Lousal infrastructure, we have created a large-scale immersive VR experience, by adopting its Openscenegraph (OSG) based VR middleware, as a basis for our development. Since our goal was to create an underlying system that could scale to arbitrary large astrophysical datasets, we have splitted our architecture in offline and runtime subsystems, where the former is responsible for parsing the available data sources into a SQL database, which will then be used by the runtime system to generate the entire VR scene graph environment, for the interactive user experience. Real-time computer graphics requirements lead us to adopt some visualization optimization techniques, namely, GPU calculation of textured billboards representing stars, view-frustum culling with octree organization of scene objects and object occlusion culling, to keep the user experience within the interactivity limits. We have built a storyboard (the “Galatica” storyboard), which describes and narrates a visual and aural user experience, while navigating through the Solar System and the Milky Way, and which was used to measure and evaluate the performance of our visualization acceleration algorithms. The system was tested with an available dataset of the complete Milky Way (including the solar system), featuring 100.639 textured billboards representing stars and additional 104.328 polygons, representing constellations and planets of the solar system. We have computed the frame rate, GPU traverse time, Cull traverse time and Draw traverse time for three visualization conditions: (A) using standard OSG view frustum culling technique; (B) using view frustum culling with and our octree organizing the scene’s objects; (C) using view frustum culling with our octree organizing the scene’s objects and our occlusion culling algorithm. We have generally concluded that our octree organization and octree plus object culling techniques out-performs the standard OSG view frustum culling, when around half or less than half of the dataset is in view of the virtual camera.info:eu-repo/semantics/acceptedVersio

Low substrate temperature deposition of amorphous and microcrystalline silicon films on plastic substrates by hot-wire chemical vapor deposition

Amorphous and microcrystalline silicon films were deposited by radio-frequency plasma enhanced chemical vapor deposition (rf-PECVD) and hot-wire chemical Vapor deposition (HW-CVD) on plastic (polyethylene terephthalate-PET) at 100 degrees C and 25 degrees C. Structural properties of these films were measured by Raman spectroscopy. Electronic properties were measured by dark conductivity and photoconductivity. For amorphous silicon films deposited by rf-PECVD on PET, photosensitivities > 10(5) were obtained at both 100 degrees C and 25 degrees C, For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 10(5) was obtained at 100 degrees C. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution had sigma(ph) similar to 10(-4) Omega(-1) cm(-1), while maintaining a photosensitivity of similar to 10(2) at both 100 degrees C and 15 degrees C. Microcrystalline silicon films with a large crystalline fraction (>50%) can be deposited by HW-CVD all the way down to room temperature. All the films had good adhesion and mechanical stability as neither adhesive nor cohesive failure was observed even when the substrates were bent elastically.Fundação para a Ciência e Tecnologia (FCT) Universidade do Minho (UM) Fundação Luso-Americana para o Desenvolvimento (FLAD

Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hot-wire chemical vapor deposition

The gas phase doping of amorphous (alpha -Si:H) and microcrystalline (muc-Si:H) silicon thin films deposited at substrate temperatures of 25 degreesC and 100 degreesC by hot-wire chemical vapor deposition is studied. Phosphine was used for n-type doping and diborane for p-type doping. The electronic and structural properties of the doped films are studied as functions of hydrogen dilution. Films were deposited on glass and polyethylene terephthalate. Similar dark conductivities, sigma (d), were obtained for the doped films deposited on either substrate. sigma (d) above 10(-6) Omega (-1) cm(-1) were obtained for a-Si:H films doped n-type at 25 degreesC and 100 degreesC (sigma (d)> 10(-4) Omega (-1) cm(-1)) and for alpha -Si:H doped p-type only at 100 degreesC. sigma (d), equal or above 10(-1) Omega (-1) cm(-1), were obtained for muc-Si:H doped p-type at 25 degreesC and 100 degreesC for Ac-Si:H doped n-type. only at 100 degreesC. Isochronal annealing at temperatures up to 200 degreesC reveals that, while the dopants are fully activated in microcrystalline samples, they are only partially activated in amorphous films deposited at a low substrate temperature.Fundação para a Ciência e Tecnologia (FCT) University of Minho (UM

Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition

The gas phase doping of hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon thin films deposited on glass and on plastic (polyethylene terephthalate) substrates is reported. Two substrate temperatures were used during deposition: 25 degreesC and 100 degreesC. Films were deposited by radio-frequency plasma-enhanced chemical vapor deposition using phosphine or diborane for n- or p-type doping, respectively. Similar electronic and structural properties are obtained for the doped films deposited on either substrate. Hydrogen dilution of silane is used to improve the electronic and structural properties of the amorphous films and to obtain nanocrystalline films. The most conductive amorphous films have n-type dark conductivity at room temperature similar to10(-3) Omega(-1) cm(-1) and similar to10(-5) Omega(-1) cm(-1) when deposited at 100degreesC and 25degreesC, respectively, or p-type room-temperature dark conductivity similar to10(-7) Omega(-1) cm(-1) at both substrate temperatures. The most conductive nanocrystalline films deposited at 100 degreesC have n- and p-type dark conductivity at room temperature above 10(-2) Omega(-1) cm(-1) while nanocrystalline films deposited at 25 degreesC only have p-type conductivity higher than 10(-2) Omega(-1) cm(-1) at room temperature. Isochronal annealing at temperatures up to 300 degreesC showed that the dopants are fully activated at the deposition temperature in doped nanocrystalline samples and that they are only partially activated in amorphous films deposited at low substrate temperatures.Fundação para a Ciência e Tecnologia (FCT) Universidade do Minho (UM

Piezoresistor sensor fabrication by direct laser writing on hydrogenated amorphous silicon

In this paper we report on the 532 nm Nd:YAG laser-induced crystallization of 10 nm thick boron-doped hydrogenated amorphous silicon thin films deposited on flexible polyimide and on rigid oxidized silicon wafers by hot-wire chemical vapor deposition. The dark conductivity increased from ~10-7 -1cm-1, in the as-deposited films, to ~10 and 50 -1cm-1 after laser irradiation, on rigid and flexible substrates, respectively. Depending on type of substrate, laser power and fluence, a Raman crystalline fraction between 55 and 90% was measured in HWCVD films, which was higher than observed in rf-PECVD films (35 - 55%). Crystallite size remained small in all cases, in the range 6-8 nm. Due to a very high conductivity contrast (>7 orders of magnitude) between amorphous and crystallized regions, it was possible to define conductive paths in the a-Si:H matrix, by mounting the sample on a X-Y software-controlled movable stage under the laser beam, with no need for the usual lithography steps. The resistors scribed by direct laser writing had piezoresistive properties, with positive gauge factor ~1. The details of the laser interaction process with the Si film were revealed by scanning electron microscopy imaging.(undefined

Trichloroacetic Acid (80%) As a Chemical Debridement Method for Chronic Venous Leg Ulcers - a Pilot Study

Debridement is essential for the optimal care of venous leg ulcers. Several debridement methods with different limitations may be deployed. Trichloroacetic acid (TCA) is used for several dermatological purposes. Its application as a chemical debridement method for leg ulcers has never been explored. We designed a prospective study to determine the role of 80% TCA solution as a chemical debridement method for leg ulcers, regarding efficacy and procedure-associated pain. Chronic venous leg ulcers were treated with 3 cycles of 80% TCA solution or curettage over 1 week. Pain and the mean percentage of fibrin and devitalized tissue covering wound bed were evaluated. At the end of the study, a trend towards larger fibrin mean reduction among the TCA treated ulcers was observed, although this difference was not statistically significant (P = .35). The mean pain score after TCA application was significantly reduced compared to pain after curettage alone (P < 0.001). TCA presented several advantages over mechanical debridement: it is a more selective debridement method, has haemostatic properties, and a simpler and faster application. The 80% TCA solution may be a cheap, simple, and considerably less-painful chemical debridement method for venous leg ulcers compared to classical mechanical debridement.info:eu-repo/semantics/publishedVersio

The Role of Hyperbaric Oxygen Therapy in Pneumatosis Cystoides Intestinalis—A Scoping Review

Pneumatosis cystoides intestinalis (PCI) is characterized by gas-filled cysts within gastrointestinal tract wall from esophagus to rectum, with preferential involvement of large and small intestine. PCI is rare with an estimated incidence of 0.03 to 0-2% in general population. PCI can be distinguished into idiopathic (15%) or secondary (85%) and the clinical picture ranges from completely asymptomatic to life-threatening intraabdominal complications. Although etiology of PCI appears to be multifactorial, the exact pathophysiology is poorly understood and two main theories have been proposed (mechanical and bacterial). Over the last decades, an enormous therapeutic armamentarium was considered in PCI's management, including hyperbaric oxygen therapy (HBOT). Treatment comprises conservative treatment in mild cases to surgery in highly symptomatic and complicated PCI. In the late 70s, HBOT started to be used in selected cases of PCI not responding to conservative measures. Since then, several case reports, case series, and reviews have been published in the literature with variable outcomes. The overall response rate and complete response were 92.1% (n = 82/89) and 65.2% (n = 58/89), respectively, with a median follow-up of 7 months. Furthermore, HBOT is extremely safe, with few reported complications in the literature when used for PCI. Nevertheless, a randomized, controlled, and double-blind clinical trial is unlikely to occur given the rarity of PCI, logistical issues of HBOT, and methodological considerations related to adequate blinding with a sham-controlled group. HBOT in combination with personalized diet and antibiotics may be beneficial for moderate to severe PCI in patients with no indication for emergency exploratory laparotomy. The purpose of this article is to synthesize the existing data, analyse results of previous studies, identify gaps in knowledge, and discuss PCI' management, including the proposal of an algorithm, with a special focus on HBOT.info:eu-repo/semantics/publishedVersio

Electronic transport in low-temperature silicon nitride

Perpendicular current transport through thin silicon nitride films deposited at 100 degreesC by radio frequency chemical vapor deposition (RF) is measured between patterned square contacts with side lengths between 5 and 200 mum. Hydrogen dilution, silane-to-ammonia ratio, and total gas flow were varied to achieve control of film properties. The dependence of the current on the applied field and measurement temperature are correlated to structural parameters such as the index of refraction, etching rate in buffered hydrofluoric acid and infrared vibrational band strengths. Using the appropriate deposition parameters, it is possible to prepare, at 100 degreesC, silicon nitride dielectric films with electronic properties compatible with use as gate dielectrics of thin-film transistors.Fundação para a Ciência e Tecnologia (FCT) Universidade do Minho (UM

On-chip array of thermoelectric peltier microcoolers

This article reports on the theoretical modelling, the Finite Element Modelling (FEM) simulation, the fabrication process and preliminary results of the first on-chip thermoelectric microcooler array (64 pixels arranged in a 8×8 array), with each pixel independently controlled. This microcooler array uses co-evaporated V–VI compounds of Bi2Te3 and Sb2Te3 as thermoelectric layers, and can be fabricated using planar thin-film technology, lithography and wet etching, on top of a silicon wafer where the CMOS electronic circuits were previously made

Wafer scale fabrication of graphene microelectrode arrays for the detection of DNA hybridization

Since the discovery of graphene, and due to its unique properties, we have witnessed a growing interest in the use of graphene-based devices for applications in the most diverse areas, namely in biosensing, particularly in the detection of genetic material. DNA can bind directly to graphene without the need of a linker and that makes this platform highly interesting for biosensor development. Here, electrochemical chips consisting of 6 independent gold microelectrode arrays as working electrode, and platinum reference and counter electrodes were fabricated at the wafer scale and, after graphene transfer and patterning, were used in the detection of DNA hybridization. Combining the sensitivity of electrochemical impedance spectroscopy and the selectivity of DNA beacons, we were able to detect DNA hybridization in a linear range between 5 pM and 5 nM, which is in the relevant clinical range for many diseases, with sensitivity to single nucleotide polymorphism.Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UID/FIS/04650/2013info:eu-repo/semantics/acceptedVersio