Data related to manuscript ['Polaron Photoconductivity in the Weak and Strong Light-Matter Coupling Regime', Phys. Rev. Lett. (2020), https://doi.org/10.1103/PhysRevLett.124.177401']

We investigate the potential for cavity-modified electron transfer in a doped organic semiconductor through the photocurrent that arises from exciting charged molecules (polarons). When the polaron optical transition is strongly coupled to a Fabry-Perot microcavity mode, we observe polaron polaritons in the photoconductivity action spectrum and find that their magnitude depends differently on applied electric field than photocurrent originating from the excitation of uncoupled polarons in the same cavity. Crucially, moving from positive to negative detuning causes the upper and lower polariton photocurrents to swap their field dependence, with the more polaron like branch resembling that of an uncoupled excitation. These observations are understood on the basis of a phenomenological model in which strong coupling alters the Onsager dissociation of polarons from their dopant counterions by effectively increasing the thermalization length of the photoexcited charge carrier

Polaron Photoconductivity in the Weak and Strong Light-Matter Coupling Regime

We investigate the potential for cavity-modified electron transfer in a doped organic semiconductor through the photocurrent that arises from exciting charged molecules (polarons). When the polaron optical transition is strongly coupled to a Fabry-Perot microcavity mode, we observe polaron polaritons in the photoconductivity action spectrum and find that their magnitude depends differently on applied electric field than photocurrent originating from the excitation of uncoupled polarons in the same cavity. Crucially, moving from positive to negative detuning causes the upper and lower polariton photocurrents to swap their field dependence, with the more polaronlike branch resembling that of an uncoupled excitation. These observations are understood on the basis of a phenomenological model in which strong coupling alters the Onsager dissociation of polarons from their dopant counterions by effectively increasing the thermalization length of the photoexcited charge carrier

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (∼30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric

Hybrid perovskite light emitting diodes under intense electrical excitation

Hybrid perovskite semiconductors are promising for wavelength-tunable laser diodes but their behavior under intense electrical excitation remains unexplored. Kim et al. investigate perovskite light emitting diodes at current densities nearing 1 kA cm−2 and suggest that a laser diode is within reach

Ultra-low thermal conductivity and acoustic dynamics of Si nanostructured metalattices probed using ultrafast high harmonic beams

We extend optical nanometrology capabilities to smaller dimensions by using tabletop coherent extreme ultraviolet (EUV) beams. Specifically, we characterize thermal transport and acoustic wave propagation in 3D periodic silicon inverse metalattices with <15nm characteristic dimensions. Measurements of the thermal transport demonstrate that metalattices may significantly impede heat flow, making them promising candidates for thermoelectric applications. Extraction of the acoustic wave dispersion down to ~100nm shows good agreement with finite element predictions, confirming that these semiconductor metalattices were fabricated with a very high-quality. These results demonstrate that EUV nanometrology is capable of extracting both dispersion relations, and thermal properties of 3D complex nano-systems, with applications including informed design and process control of nanoscale devices

Ultra-low thermal conductivity and acoustic dynamics of Si nanostructured metalattices probed using ultrafast high harmonic beams

We extend optical nanometrology capabilities to smaller dimensions by using tabletop coherent extreme ultraviolet (EUV) beams. Specifically, we characterize thermal transport and acoustic wave propagation in 3D periodic silicon inverse metalattices with <15nm characteristic dimensions. Measurements of the thermal transport demonstrate that metalattices may significantly impede heat flow, making them promising candidates for thermoelectric applications. Extraction of the acoustic wave dispersion down to ~100nm shows good agreement with finite element predictions, confirming that these semiconductor metalattices were fabricated with a very high-quality. These results demonstrate that EUV nanometrology is capable of extracting both dispersion relations, and thermal properties of 3D complex nano-systems, with applications including informed design and process control of nanoscale devices