High-Speed Quadratic Electrooptic Nonlinearity in dc-Biased InP

We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semiinsulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect

Time-Resolved Transient Grating Spectroscopy for Studies of Nonequilibrium Carrier Dynamics in Wide Band-Gap Semiconductors

Using interdisciplinary fields relevant to a highly excited semiconductor - nonequilibrium phenomena in high density plasma, light-induced changes of optical properties, and dynamic holography, we developed time-resolved four-wave mixing technique for monitoring the spatial and temporal carrier dynamics in wide band-gap semiconductors. This opened a new possibility to analyse fast electronic processes in a non-destructive "all-optical" way, i.e. without any electrical contacts. This technique allowed evaluation of recombination and transport processes and the determination of important carrier parameters which directly reveal the material quality: carrier lifetime, bipolar diffusion coefficients, surface recombination rate, nonlinear recombination rate, diffusion length, threshold of stimulated recombination. The recent experimental studies of differently grown group III-nitrides (heterostructures and free standing films) as well silicon carbide epilayers by nondegenerate picosecond four-wave mixing are presented

High-Speed Quadratic Electrooptic Nonlinearity in dc-Biased InP

We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semi-insulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect

High-Speed Quadratic Electrooptic Nonlinearity in dc-Biased InP

We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semi-insulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect

Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques

Time-resolved photoluminescence and four-wave mixing techniques have been combined for studies of carrier relaxation dynamics in a highly photoexcited GaN epilayer. For a moderate excitation density below 1 mJ/cm$\text{}^{2}$, carrier recombination was due to free carrier capture by deep traps. The characteristic time of carrier capture,τ$\text{}_{e}$=550 ps, was measured under deep trap saturation regime. The ambipolar diffusion coefficient for free carriers, D=1.7 cm$\text{}^{2}$/s, was estimated from the analysis of the transients of the light-induced gratings of various periods. A complete saturation of the four-wave mixing efficiency was observed for the excitation energy density exceeding 1.5 mJ/cm$\text{}^{2}$. The latter saturation effect was shown to be related to electron-hole plasma degeneration, which results in a significant enhancement of carrier recombination rate due to onset of stimulated emission

Inter-firm Migration of Tacit Knowledge: Law and Policy

Time-resolved optical techniques of photoluminescence (PL), light-induced transient grating(LITG), and differential transmission spectroscopy were used to investigate carrier dynamics in a single 50-nm thick In0.13Ga0.97N epilayer at high photoexcitation levels. Data in wide spectral, temporal, excitation, and temperature ranges revealed novel features in spectral distribution of recombination rates as follows: at low injection levels, an inverse correlation of carrier life time increasing with temperature and diffusivity decreasing with temperature confirmed a mechanism of diffusion-limited nonradiative recombination at extended defects. Carrier dynamics in the spectral region below the absorption edge but ∼70 meV above the PL band revealed a recombination rate that increased with excitation, while recombination rate in PL emission band (420–430 nm) decreased after saturation of trapping centers. Monitoring of spectrally integrated carrier dynamics by LITG technique allowed us to ascribe the enhanced recombination rate to bimolecular recombination and determine its coefficient B = 7 × 10−11 cm3/s. Complementary measurements unveiled the cause of PL efficiency saturation at injection levels above 5 × 1018 cm−3, attributable to bandgap renormalization in the extended states above the PL emission band, which encumbers carrier transfer from high-to-low energy states. As the degree of localization, and therefore, the total number of band tail states is expected to increase with In content, their impact to dependence of PL efficiency on excitation density could even be stronger for higher In compositions. These results provided insight that spectrally resolved carrier generation-recombination rates are excitation-dependent and would play a critical role in saturation of internal quantum efficiency in InGaN alloys used in light emitters, such as light emitting diodes