Application the Ion Beam Sputtering Deposition Technique for the Development of Spin-Wave Structures on Ferroelectric Substrates

The microwave properties of structures in the form of the 2 μm iron-yttrium garnet (YIG) films, grown by the ion beam sputtering deposition method on epitaxially mismatched substrates of ferroelectric ceramics based on lead zirconate titanate (PZT, PbZr0.45Ti0.55O3), are discussed. The obtained structures were formed and pre-smoothed by the ion beam planarization substrates with the use of an anti-diffusion layer of titanium dioxide TiO2. The atomic force microscopy showed that the planarization of the substrates allows for reaching a nanoscale level of roughness (up to 10 nm). The presence of smooth plane–parallel interfaces of YIG/TiO2 and TiO2/PZT is evidenced by scanning electron microscopy performed in focused gallium ion beams. Ferromagnetic resonance spectroscopy revealed a broadening in the absorption line of the ferrite garnet layers in the resonance ≈ 100 Oe. This broadening is associated with the presence of defects caused by the of the ceramic substrate non-ideality. The estimated damping coefficient of spin waves turned out to be ~10−3, which is two orders of magnitude higher than in an ideal YIG single crystal. The YIG/TiO2/PZT structures obtained can be used for the study of spin waves

A New Approach to the Formation of Nanosized Gold and Beryllium Films by Ion-Beam Sputtering Deposition

Thin films of beryllium and gold that are several tens of nanometers thick were obtained, for the first time, on silicon and quartz substrates by the ion-beam method with tenfold alternation of deposition and partial sputtering of the nanosized metal layer. Scanning electron and atomic force microscopy indicate the predominant lateral growth of nanosized metal layers along the substrate surface. Optical spectra indicate the suppression of the localized plasmon resonance. The growth of the film occurs under the influence of the high-energy component of the sputtered metal atoms’ flux. The main role in the formation of the nanosized metal film is played by the processes of the elastic collision of incident metal atoms with the atoms of a substrate and a growing metal film. Metal films that are obtained by the tenfold application of the deposition–sputtering of a nanoscale metal layer are characterized by stronger adhesion to the substrate and have better morphological, electrical, and optical characteristics than those that are obtained by means of direct single deposition