Design and characterisation of multi-mode interference reflector lasers for integrated photonics

InAs quantum dot ridge waveguide lasers comprising single-port multi-mode-interference-reflectors (MMIR) and single-cleaved reflectors are designed, fabricated, and characterised, to demonstrate capability for optoelectronic-integrated-circuits. Simulations of an MMIR show high values of fundamental mode reflectivity ( >80%) and good selectivity against higher order modes. Deep-etched MMIR lasers fabricated with 0.5 mm long cavities have a threshold current of 24 mA, compared to 75 mA for standard Fabry–Perot cleaved–cleaved FP-RWG lasers of the same length, both at 25 °C, and 56 mA compared to 102 mA at 55 °C. MMIR lasers exhibit stable ground state operation up to 50 °C and show promise as small footprint sources for integrated photonics

Multi-mode interference reflector for integrated photonics

1-port and 2-port InAs-QD MMIR lasers are designed, fabricated, and characterized. MMIRs laser have lower threshold current densities compared to cleaved-cleaved FP lasers with the same cavity length, up to 40% less. They are promising for use in optoelectronic-integrated circuits

Multi-mode interference reflector based InAs-QD laser

InAs quantum dot multi-mode-interference-reflector (MMIR) lasers, based on a 1-port MMIR and a single cleaved reflector, are designed, fabricated, and characterized to demonstrate capability for optoelectronic-integrated-circuits. Threshold current densities are less than 40% of those in cleaved-cleaved ridge waveguide lasers of the same cavity length