Realisation of multi-mode reflector lasers for integrated photonics

The epitaxial growth of III-V materials on silicon is an alternative approach to combining silicon photonics with the active laser source. Substantial progress has been made to reduce the defects created at the III-V / Si interface to a level that has a negligible impact on laser operating current and lifetime, providing quantum dot gain materials are utilized [1], [2]. A number of issues remain for the integration of III-V structures with silicon, not least that of reducing the footprint and ensuring the fabrication required is as simple as possible. While the laser reflectors can be fabricated in the silicon here we focus on using the III-V material, which removes the need to have the III-V / Silicon interface and its associated losses within the laser cavity

Design and Characterisation of Multi-Mode Interference Reflector Lasers for Integrated Photonics

InAs quantum dot ridge waveguide lasers comprising single-port multi-mode-interference-reflectors (MMIR) and single-cleaved reflectors are designed, fabricated, and characterised, to demonstrate capability for optoelectronic-integrated-circuits. Simulations of an MMIR show high values of fundamental mode reflectivity ($> 80\% )$ and good selectivity against higher order modes. Deep-etched MMIR lasers fabricated with 0.5 mm long cavities have a threshold current of 24 mA, compared to 75 mA for standard Fabry–Perot cleaved–cleaved FP-RWG lasers of the same length, both at 25 °C, and 56 mA compared to 102 mA at 55 °C. MMIR lasers exhibit stable ground state operation up to 50 °C and show promise as small footprint sources for integrated photonics