Dielectric loss of boron-based dielectrics on niobium resonators

Advanced solid-state quantum bits (qubits) are likely to require a variety of dielectrics for wiring crossovers, substrates, and Josephson junctions. Microwave superconducting resonators are an excellent tool for measuring the internal dielectric loss of materials. We report the dielectric loss of boron-based dielectric films using a microwave coplanar waveguide (CPW) resonator with heterostructure geometry. Power-dependent internal quality factors of magnetron-sputtered boron carbide ( B4C ) and boron nitride (BN) were measured and are compared to silicon oxide ( SiO2 ), a common material used in wiring crossovers. The internal dielectric loss due to two-level systems for B4C , and BN is less than silicon dioxide ( SiO2 ), which demonstrates the existence of low-loss sputtered materials. We also found that niobium (Nb) CPW resonators suffer a decrease in internal quality factor after deposition of B4C at temperatures above 150 ∘C . This result is consistent with the idea that the oxidation of the surface of the superconducting metal can contribute to loss in a device

In Situ Measurements of Strain Evolution in Graphene/Boron Nitride Heterostructures Using a Non-Destructive Raman Spectroscopy Approach

The mechanical properties of engineered van der Waals (vdW) 2D materials and heterostructures are critically important for their implementation into practical applications. Using a non-destructive Raman spectroscopy approach, this study investigates the strain evolution of single-layer graphene (SLGr) and few-layered boron nitride/graphene (FLBN/SLGr) heterostructures. The prepared 2D materials are synthesized via chemical vapor deposition (CVD) method and then transferred onto flexible polyethylene terephthalate (PET) substrates for subsequent strain measurements. For this study, a custom-built mechanical device-jig is designed and manufactured in-house to be used as an insert for the 3D piezoelectric stage of the Raman system. In situ investigation of the effects of applied strain in graphene detectable via Raman spectral data in characteristic bonds within SLGr and FLBN/SLGr heterostructures is carried out. The in situ strain evolution of the FLBN/SLGr heterostructures is obtained in the range of (0–0.5%) strain. It is found that, under the same strain, SLG exhibits a higher Raman shift in the 2D band as compared with FLBN/SLGr heterostructures. This research leads to a better understanding of strain dissipation in vertical 2D heterostacks, which could help improve the design and engineering of custom interfaces and, subsequently, control lattice structure and electronic properties. Moreover, this study can provide a new systematic approach for precise in situ strain assessment and measurements of other CVD-grown 2D materials and their heterostructures on a large scale for manufacturing a variety of future micro- and nano-scale devices on flexible substrates