Chemical Vapour Deposition of Rhenium Disulfide and Rhenium-Doped Molybdenum Disulfide Thin Films Using Single-Source Precursors

Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1−xRexS2(0 ≤x≤ 0.06) have been deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(μ-SiPr)3(SiPr)6] and [Mo(S2CNEt2)4] at 475 °C.</p

Sequential bottom-up and top-down processing for the synthesis of transition metal dichalcogenide nanosheets: the case of rhenium disulfide (ReS2)

Bottom-up (aerosol-assisted chemical vapor deposition, AACVD) and top-down (liquid phase exfoliation, LPE) processing methodologies are used in tandem to produce colloids of few-layer thick rhenium disulfide (ReS2) in N-methyl pyrrolidone.</p

The influence of precursor on rhenium incorporation into Re-doped MoS₂ (Mo_1-:XRe_xS₂) thin films by aerosol-assisted chemical vapour deposition (AACVD)

The molecular precursors [Mo(S2CNEt2)4] (1), [Re(S2CC6H5)(S3CC6H5)2] (2), and [Re2(μ-S)2(S2CNEt2)4] (3) were used to deposit thin films of Re-doped MoS2.</p