Lattice-Gas Simulations of Ternary Amphiphilic Fluid Flow in Porous Media

We develop our existing two-dimensional lattice-gas model to simulate the flow of single-phase, binary-immiscible and ternary-amphiphilic fluids. This involves the inclusion of fixed obstacles on the lattice, together with the inclusion of ``no-slip'' boundary conditions. Here we report on preliminary applications of this model to the flow of such fluids within model porous media. We also construct fluid invasion boundary conditions, and the effects of invading aqueous solutions of surfactant on oil-saturated rock during imbibition and drainage are described.Comment: 9 pages, 6 figures (1 and 6 are in color), RevTeX with epsf and graphic

Front-end process modeling in silicon

Front-end processing mostly deals with technologies associated to junction formation in semiconductor devices. Ion implantation and thermal anneal models are key to predict active dopant placement and activation. We review the main models involved in process simulation, including ion implantation, evolution of point and extended defects, amorphization and regrowth mechanisms, and dopant-defect interactions. Hierarchical simulation schemes, going from fundamental calculations to simplified models, are emphasized in this Colloquium. Although continuum modeling is the mainstream in the semiconductor industry, atomistic techniques are starting to play an important role in process simulation for devices with nanometer size features. We illustrate in some examples the use of atomistic modeling techniques to gain insight and provide clues for process optimization