Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

In this chapter, we review the application of zinc oxide (ZnO) in ultraviolet (UV) sensing and emphasise on the two-dimensional (2D) ZnO structures. The synthesis of 2D ZnO structures, the morphologies, and the photoluminescence emission will be reviewed and highlighted. The performance of the UV sensors based on 2D ZnO structures is explored. The lack in the study of the 2D ZnO UV sensors might be due to the difficulties of controlling the growth of the 2D ZnO compared to the one-dimensional (1D) ZnO structures

UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation

Transition metal oxides semiconductors are well known multifunction compounds, some show an n-type behaviour such as zinc oxide, titanium oxide and the others behave as p-type semiconductors. In this study nickel oxide (NiO) thin films (as a p-type semiconductor) was prepared via two-step process, first Ni metal is thermally evaporated on an n-type silicon substrate in high vacuum thermal evaporation unit, then thermal oxidation was employed to convert the Ni metal to NiO in a controllable tube furnace at atmospheric ambient. The prepared thin films were characterized through X-ray diffraction to verify its phase structures, ultraviolet–visible spectrophotometry to study its optical properties. The prepared p-n junction based on NiO thin films and the Si substrate was tested as UV-visible photodetector. The results show a blind sun light photodetector with high selectivity to UV light. The device performance as a UV photodetector will be explored

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions

Highly Sensitive Magnesium-Doped ZnO Nanorod pH Sensors Based on Electrolyte–Insulator–Semiconductor (EIS) Sensors

For highly sensitive pH sensing, an electrolyte insulator semiconductor (EIS) device, based on ZnO nanorod-sensing membrane layers doped with magnesium, was proposed. ZnO nanorod samples prepared via a hydrothermal process with different Mg molar ratios (0–5%) were characterized to explore the impact of magnesium content on the structural and optical characteristics and sensing performance by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), and photoluminescence (PL). The results indicated that the ZnO nanorods doped with 3% Mg had a high hydrogen ion sensitivity (83.77 mV/pH), linearity (96.06%), hysteresis (3 mV), and drift (0.218 mV/h) due to the improved crystalline quality and the surface hydroxyl group role of ZnO. In addition, the detection characteristics varied with the doping concentration and were suitable for developing biomedical detection applications with different detection elements

Amperometric Non-Enzymatic Hydrogen Peroxide Sensor Based on Aligned Zinc Oxide Nanorods

Zinc oxide (ZnO) nanorods (NRs) have been synthesized via the hydrothermal process. The NRs were grown over a conductive glass substrate. A non-enzymatic electrochemical sensor for hydrogen peroxide (H2O2), based on the prepared ZnO NRs, was examined through the use of current-voltage measurements. The measured currents, as a function of H2O2 concentrations ranging from 10 μM to 700 μM, revealed two distinct behaviours and good performance, with a lower detection limit (LOD) of 42 μM for the low range of H2O2 concentrations (first region), and a LOD of 143.5 μM for the higher range of H2O2 concentrations (second region). The prepared ZnO NRs show excellent electrocatalytic activity. This enables a measurable and stable output current. The results were correlated with the oxidation process of the H2O2 and revealed a good performance for the ZnO NR non-enzymatic H2O2 sensor

Electrochemical Hydrogen Peroxide Sensor Based on Macroporous Silicon

Macroporous silicon was prepared through an anodization process; the prepared samples showed an average pore size ranging from 4 to 6 microns, and the depth of the pores in the silicon wafer was approximately 80 microns. The prepared samples were tested for hydrogen peroxide (H2O2) concentrations, which can be used for industrial and environmental sensing applications. The selected H2O2 concentration covered a wide range from 10 to 5000 μM. The tested samples showed a linear response through the tested H2O2 concentrations with a sensitivity of 0.55 μA μM–1∙cm–2 and lower detection limits of 4.35 μM at an operating voltage of 5 V. Furthermore, the electrode exhibited a rapid response with a response time of ca. two seconds. Furthermore, the prepared sensor showed a reasonable stability over a one-month time period

The characteristic of pH sensing of potentiometric on zinc oxide and aluminium-doped zinc oxide nanostructures

Numerous investigations have been conducted to increase the sensitivity and stability of metal oxide semiconductors as pH-sensing membranes. This paper will describe the pH sensing and characterisation of zinc oxide (ZnO) and aluminium-doped zinc oxide (ZnO:Al) as potentiometric pH sensors. The hydrothermal technique was used to grow ZnO and ZnO:Al thin film nanostructures with doping concentrations of 1, 3, and 5 at% Al on the cleaned ITO substrates. The pH potentiometric sensing was performed in a wide pH range of 4-12 and produced sensitivity, including stability of the nanostructures. The prepared samples were also characterized by X-ray diffraction analysis (XRD), field effect scanning electron microscope (FESEM), and energy dispersive X-ray (EDX) to explore the influence of aluminium concentration on structural and morphology characteristics and then prepared as electrodes for pH sensing. From the XRD result, the sharp peaks and high peak intensities demonstrated well crystalline of the synthesized ZnO nanorods. Furthermore, the FESEM shows the growth of array nanorods perpendicular over the surface of ITO. The sensitivity of the pH sensor with 3 at% ZnO:Al exhibits higher sensitivity (43.80 mV/pH) and larger linearity (0.9507)

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions