The Effect of Annealing on The Structural and Optical Properties of Copper Oxide Thin Films Prepared by SILAR Method

Copper oxide thin films were deposited on glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The thickness of the thin films was around 0.43?m.Copper oxide thin films were annealed in air at (200, 300 and 400°C for 45min.The film structure properties were characterized by x-ray diffraction (XRD). XRD patterns indicated the presence of polycrystalline CuO. The average grain size is calculated from the X-rays pattern, it is found that the grain size increased with increasing annealing temperature. Optical transmitter microscope (OTM) and atomic force microscope (AFM) was also used. Direct band gap values of 2.2 eV for an annealed sample and (2, 1.5, 1.4) eV at 200, 300,400oC respectively

Preparation and Study the Structural and Optical Properties of CuS nano film

Thin films of CuS were prepared by Successive Ionic Layer And Reaction (SILAR) method from solution of CuCl2 and Na2S at two different molarities (0.03 M and 0.06 M) on glass substrates at room temperature. The structural and optical properties of CuS films were determined using X-ray diffraction (XRD) and UV-VIS spectrophotometer respectively. The films are polycrystalline, very adherent to the substrate and well crystallized according to the centered cubic structure with preferential orientation along (103) . It was found that the energy gap of CuS varies from 2.4eV to 2.8eV for thickness of 0.55μm and 0.82μm respectively (i.e depending on the deposition conditions)