1,196 research outputs found

    A study of the ferromagnetic transition of SrRuO3SrRuO_3 in nanometer thick bilayers with YBa2Cu3OyYBa_2Cu_3O_y, La1.88Sr0.12CuO4βˆ’yLa_{1.88}Sr_{0.12}CuO_{4-y}, Au and Cr: Signature of injected carriers in the pseudogap regime

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    The hypothesis regarding the existence of uncorrelated pre-formed pairs in the pseudogap regime of superconducting YBa2Cu3OyYBa_2Cu_3O_y is tested experimentally using bilayers of YBa2Cu3OyYBa_2Cu_3O_y and the itinerant ferromagnet SrRuO3SrRuO_3. In our study, we monitor the influence of YBa2Cu3OyYBa_2Cu_3O_y on TpT_p, the ferromagnetic ordering temperature of SrRuO3SrRuO_3. Here, TpT_p is the temperature of maximum dM/dT or dR/dT where M and R are the magnetization and resistance of SrRuO3SrRuO_3, respectively. We compare the results with similar measurements carried out on bilayers of La1.88Sr0.12CuO4βˆ’yLa_{1.88}Sr_{0.12}CuO_{4-y}, AuAu and CrCr with SrRuO3SrRuO_3. We find that in bilayers made of underdoped 10 nm YBa2Cu3OyYBa_2Cu_3O_y/5 nm SrRuO3SrRuO_3, the TpT_p values are shifted to lower temperatures by up to 6-8 K as compared to Tpβ‰ˆ140T_p\approx 140 K of the 5 nm thick reference SrRuO3SrRuO_3 film. In contrast, in the other type of bilayers, which are not in the pseudogap regime near TpT_p, only a smaller shift of up to Β±\pm2 K is observed. These differences are discussed in terms of a proximity effect, where carriers from the YBa2Cu3OyYBa_2Cu_3O_y layer are injected into the SrRuO3SrRuO_3 layer and vice versa. We suggest that correlated electrons in the pseudogap regime of YBa2Cu3OyYBa_2Cu_3O_y are responsible for the observed large TpT_p shifts.Comment: 9 figure

    Diamond nanophotonics

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    Β© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. The burgeoning field of nanophotonics has grown to be a major research area, primarily because of the ability to control and manipulate single quantum systems (emitters) and single photons on demand. For many years, studying nanophotonic phenomena was limited to traditional semiconductors (including silicon and GaAs) and experiments were carried out predominantly at cryogenic temperatures. In the last decade, however, diamond has emerged as a new contender to study photonic phenomena at the nanoscale. Offering a plethora of quantum emitters that are optically active at room temperature and ambient conditions, diamond has been exploited to demonstrate super-resolution microscopy and realize entanglement, Purcell enhancement, and other quantum and classical nanophotonic effects. Elucidating the importance of diamond as a material, this progress report highlights the recent achievements in the field of diamond nanophotonics, and conveys a roadmap for future experiments and technological advancements

    Suppression of Spectral Diffusion by Anti-Stokes Excitation of Quantum Emitters in Hexagonal Boron Nitride

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    Solid-state quantum emitters are garnering a lot of attention due to their role in scalable quantum photonics. A notable majority of these emitters, however, exhibit spectral diffusion due to local, fluctuating electromagnetic fields. In this work, we demonstrate efficient Anti-Stokes (AS) excitation of quantum emitters in hexagonal boron nitride (hBN), and show that the process results in the suppression of a specific mechanism responsible for spectral diffusion of the emitters. We also demonstrate an all-optical gating scheme that exploits Stokes and Anti-Stokes excitation to manipulate spectral diffusion so as to switch and lock the emission energy of the photon source. In this scheme, reversible spectral jumps are deliberately enabled by pumping the emitter with high energy (Stokes) excitation; AS excitation is then used to lock the system into a fixed state characterized by a fixed emission energy. Our results provide important insights into the photophysical properties of quantum emitters in hBN, and introduce a new strategy for controlling the emission wavelength of quantum emitters

    Imaging and quantum efficiency measurement of chromium emitters in diamond

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    We present direct imaging of the emission pattern of individual chromium-based single photon emitters in diamond and measure their quantum efficiency. By imaging the excited state transition dipole intensity distribution in the back focal plane of high numerical aperture objective, we determined that the emission dipole is oriented nearly orthogonal to the diamond-air interface. Employing ion implantation techniques, the emitters were engineered with various proximities from the diamond-air interface. By comparing the decay rates from the single chromium emitters at different depths in the diamond crystal, an average quantum efficiency of 28% was measured.Comment: 11 pages and 4 figure
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