In GaN Double Heterostructure (DH) Laser Diode Performance And Optimization.

The laser performances of the blue DH InGaN laser diode (LD) structures have been numerically investigated by using ISE TCAD software

Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances

Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.

High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE)

Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature

The Performance of Portland Cement Pastes (OPC) Incorporated with Ceramic Sanitary Ware Powder Waste (CSPW) at Ambient Temperature

The physical and mechanical performance of Portland cement pastes (OPC) incorporated waste ceramic sanitary ware powder waste (CSPW) at ambient temperature has been investigated. Cement mixes were prepared by replacing the cement with CSPW at proportions of 0, 4, 8, 12, 16 and 20 wt. %. The results showed that the water of consistency and setting times (initial and final) were increased with the gradual addition of CSP, whereas the water absorption and total porosity were decreased, while the bulk density slightly was enhanced but only up to 16 wt. % CSPW. The same trend was displayed with mechanical properties, where the flexural (FS) and compressive strengths (CS) of the cement specimens were also improved and enhanced till 16 wt. %, but then all were decreased with further addition of CSPW. The experimental results indicated that the CSPW has the potential to be successfully recycled in the OPC pastes as a partial replacement merely up to 16 wt. % which had a better performance than the blank at ambient temperature. The FT-IR spectra illustrated that the amount of CSHs was increased, while that of free lime content decreased. This was confirmed by SEM microscopy. Moreover, the recovery of CSPW contributes to both reducing environmental pollution and CO2 emissions

Growth and Characterization of High-Quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation

In the current research, an easy and inexpensive method is used to synthesize highly crystalline gallium nitride (GaN) nanowires (NWs) on two different substrates [i.e., porous zinc oxide (PZnO) and porous gallium nitride (PGaN)] on Si (111) wafer by thermal evaporation without any catalyst. Microstructural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of the substrates in the nucleation and alignment of the GaN NWs. Further structural and optical characterizations were performed using high-resolution X-ray diffraction, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. Results indicate that the NWs have a single-crystal hexagonal GaN structure and growth direction in the (0001) plane. The quality and density of GaN NWs grown on different substrates are highly dependent on the lattice mismatch between the NWs and their substrates. Results indicate that NWs grown on PGaN have better quality and higher density compared to NWs on PZnO

Surface Morphology And Formation Of Nanostructured Porous GaN By UV-Assisted Electrochemical Etching.

This article reports on the studies of porous GaN .prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH30H:H202 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes

Characterization of Artificial Magnetic Conductor, Electromagnetic Band Gap and Frequency Selective Surface

This paper investigates the characteristics of Artificial Magnetic Conductor (AMC), Electromagnetic Band Gap (EBG) and Frequency Selective Surface (FSS) at 5.8 GHz. Reflection magnitude and phase are characterized both AMC and EBG meanwhile, the band gap is specially characterized by the EBG structure. Besides that, transmission and reflection coefficients are used to characterize the FSS structure. Three different flexible substrates are considered which are Fast Film, Arlon AD350 and Rogers RO3010. Then, angular stability is analyzed for each structure. In order to design AMC, EBG and FSS by using thin substrate, the highest dielectric constant is needed to develop a compact structure with the highest bandwidth. Later, AMC, EBG and FSS structures can be used to improve the radiation pattern apart from enhancing the realized gain of a low profile antenna such as dipole antenna