Accelerated tests on Si and SiC power transistors with thermal, fastand ultra-fast neutrons

Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 power transistors made by STMicroelectronics were tested in all the experiments. Tests with thermal and fast neutrons (up to about 10 MeV) at the TRIGA Mark II reactor showed that single-event burnout (SEB) failures only occurred at voltages close to the rated drain-source voltage. Thermal neutrons did not induce SEB, nor degradation in the electrical parameters of the devices. SEB failures during testing at ChipIr with ultra-fast neutrons (1-800 MeV) were evaluated in terms of failure in time (FIT) versus derating voltage curves according to the JEP151 procedure of the Joint Electron Device Engineering Council (JEDEC). These curves, even if scaled with die size and avalanche voltage, were strongly linked to the technological processes of the devices, although a common trend was observed that highlighted commonalities among the failures of different types of MOSFETs. In both experiments, we observed only SEB failures without single-event gate rupture (SEGR) during the tests. None of the power devices that survived the neutron tests were degraded in their electrical performances. A study of the worst-case bias condition (gate and/or drain) during irradiation was performed

A Novel Extraction Procedure of Contact Characteristic Parameters from Current–Voltage Curves in CdZnTe and CdTe Detectors

The estimation of the characteristic parameters of the electrical contacts in CdZnTe and CdTe detectors is related to the identification of the main transport mechanisms dominating the currents. These investigations are typically approached by modelling the current–voltage (I–V) curves with the interfacial layer–thermionic-diffusion (ITD) theory, which incorporates the thermionic emission, diffusion and interfacial layer theories into a single theory. The implementation of the ITD model in measured I–V curves is a critical procedure, requiring dedicated simplifications, several best fitting parameters and the identification of the voltage range where each transport mechanism dominates. In this work, we will present a novel method allowing through a simple procedure the estimation of some characteristic parameters of the metal–semiconductor interface in CdZnTe and CdTe detectors. The barrier height and the effects of the interfacial layer will be evaluated through the application of a new function related to the differentiation of the experimental I–V curves

High performance platinum contacts on high-flux CdZnTe detectors

The need for direct X-ray detection under high photon flux with moderate or high energies (30–100 keV range) has strongly increased with the rise of the 4th Generation Synchrotron Light Sources, characterised by extremely brilliant beamlines, and of other applications such as spectral computed tomography in medicine and non-destructive tests for industry. The novel Cadmium Zinc Telluride (CZT) developed by Redlen Technologies can be considered the reference material for high-flux applications (HF-CZT). The enhanced charge transport properties of the holes allow the mitigation of the effects of radiation induced polarization phenomena, typically observed in standard CZT materials (LF-CZT) under high photon flux. However, standard LF-CZT electrical contacts led to inacceptable high dark leakage currents on HF-CZT devices. In this work, a detailed study on the characteristics of new optimized sputtered platinum electrical contacts on HF-CZT detectors is reported. The results from electrical and spectroscopic investigations, showed the best performances on HF-CZT detectors with platinum anode, coupled with both platinum or gold cathode. The morphology, structure, and composition of Pt/CZT contact have been analysed by means of Transmission Electron Microscopy (TEM) on microscopic lamellas obtained by Focused Ion Beam (FIB), highlighting the presence of CdTeO3 oxide at the metal semiconductor interface

Alanine films for EPR dosimetry of low-energy (1-30 keV) X-ray photons

L-alpha-alanine has aroused considerable interest for use in radiation EPR dosimetry and has been formally accepted as a secondary standard for high-dose (kGy) and transfer dosimetry of high-energy photons and electrons. In this work, we extended the investigation of the energy response of alanine EPR films in the low energy range for X-photons (1-30 keV). Electron Paramagnetic Resonance (EPR) measurements were performed on Kodak BioMax alanine films exposed to low-energy X-rays from a Cu-, W- and Mo-targets tube operating at voltages up to 30 kV. Films were chosen because of the low penetration of the soft X-rays used. The response of alanine to low-energy X-rays was characterized experimentally and the relative response (with respect to high energy photons) was found to be between 0.8 and 0.9 for Cu- and W-tube X-rays, and 1.0 for Mo-tube X-rays. The attenuation profiles were investigated and it was found that 1 mm of film material reduces the intensity of the X-ray-beam by about 70%, 50% and 40% for Cu-, W- and Mo-tube X-rays, respectively. Monte Carlo simulations were performed to model the energy release as well as the depth dose profiles for the various radiation beams used. These data are considered relevant for dosimetric applications in low energy beams such the high-gradient treatment fields used in monoenergetic microbeam radiation therapy (MRT) with synchrotron radiation as well as in brachytherapy with low energy sources, for instance Yb-169

Laser-induced transient currents in CdZnTe quasi-hemispherical radiation detector

Laser-induced transient currents were measured after applying pulsed or direct-current bias to a CdZnTe quasi-hemispherical radiation detector with gold contacts. The temporal evolution of current transients was analyzed to evaluate the dynamics of the space charge formation and its spatial distribution. The observed effects were explained by a model involving hole injection from positively biased contacts. Experimental results were complemented by numerical simulations, which supported the model. This paper discusses how the detected phenomena affect the detector performance and proposes an improved detector design

Portable CdTe detection system for mammographic X-ray spectroscopy

This paper describes a portable apparatus to be utilized in mammographic X-ray spectroscopy under clinical conditions. The system, based on a CdTe solid-state detector, is able to directly measure mammographic X-ray tube spectra. Good system response to monoenergetic photons was measured using X-ray and γ-ray calibration sources (109Cd and 241Am). The measured molybdenum X-ray spectra, in agreement with simulated spectra, show the good spectral capability of the system also at high photon fluence rates, as typical of clinical mammography. Low tailing, no secondary X-ray escape and low pile-up distortions in the measured spectra indicate that this portable system is suitable for mammographic X-ray spectroscopy

Advances in High-Energy-Resolution CdZnTe Linear Array Pixel Detectors with Fast and Low Noise Readout Electronics

Radiation detectors based on Cadmium Zinc Telluride (CZT) compounds are becoming popular solutions thanks to their high detection efficiency, room temperature operation, and to their reliability in compact detection systems for medical, astrophysical, or industrial applications. However, despite a huge effort to improve the technological process, CZT detectors’ full potential has not been completely exploited when both high spatial and energy resolution are required by the application, especially at low energies (<10 keV), limiting their application in energy-resolved photon counting (ERPC) systems. This gap can also be attributed to the lack of dedicated front-end electronics which can bring out the best in terms of detector spectroscopic performances. In this work, we present the latest results achieved in terms of energy resolution using SIRIO, a fast low-noise charge sensitive amplifier, and a linear-array pixel detector, based on boron oxide encapsulated vertical Bridgman-grown B-VB CZT crystals. The detector features a 0.25-mm pitch, a 1-mm thickness and is operated at a −700-V bias voltage. An equivalent noise charge of 39.2 el. r.m.s. (corresponding to 412 eV FWHM) was measured on the test pulser at 32 ns peaking time, leading to a raw resolution of 1.3% (782 eV FWHM) on the 59 keV line at room temperature (+20 °C) using an uncollimated 241Am, largely improving the current state of the art for CZT-based detection systems at such short peaking times, and achieving an optimum resolution of 0.97% (576 eV FWHM) at 1 µs peaking time. The measured energy resolution at the 122 keV line and with 1 µs peaking time of a 57Co raw uncollimated spectrum is 0.96% (1.17 keV). These activities are in the framework of an Italian collaboration on the development of energy-resolved X-ray scanners for material recycling, medical applications, and non-destructive testing in the food industry

Optimization of quasi-hemispherical CdZnTe detectors by means of first principles simulation

In this paper we present the development of quasi-hemispherical gamma-ray detectors based on CdZnTe. Among the possible single-polarity electrode configurations, such as coplanar, pixelated, or virtual Frisch-grid geometries, quasi-hemispherical detectors are the most cost-effective alternative with comparable raw energy resolution in the high and low energy range. The optimal configuration of the sensor in terms of dimension of the crystals and electrode specifications has been first determined by simulations, and successively validated with experimental measures. Spectra from different sources have been acquired to evaluate the detectors performances. Three types of detectors with different CZT volumes have been fabricated, namely 10 × 10 × 5 mm3, 15 × 15 × 10 mm3 and 20 × 20 × 10 mm3. In the case of 10 × 10 × 5 mm3 crystals, the optimum pixel size determined by our simulation tool was confirmed by experiments: the best spectroscopic resolution of 1.3% at 662 keV has been found for a 750 μm diameter pixel detector. The best energy resolution values obtained for the 15 × 15 × 10 mm3 and 20 × 20 × 10 mm3 detectors were respectively 1.7% and 2.7% at 662 keV

Incomplete Charge Collection at Inter-Pixel Gap in Low-and High-Flux Cadmium Zinc Telluride Pixel Detectors

The success of cadmium zinc telluride (CZT) detectors in room-temperature spectroscopic X-ray imaging is now widely accepted. The most common CZT detectors are characterized by enhanced-charge transport properties of electrons, with mobility-lifetime products µeτe > 10−2 cm2/V and µhτh > 10−5 cm2/V. These materials, typically termed low-flux LF-CZT, are successfully used for thick electron-sensing detectors and in low-flux conditions. Recently, new CZT materials with hole mobility-lifetime product enhancements (µhτh > 10−4 cm2/V and µeτe > 10−3 cm2/V) have been fabricated for high-flux measurements (high-flux HF-CZT detectors). In this work, we will present the performance and charge-sharing properties of sub-millimeter CZT pixel detectors based on LF-CZT and HF-CZT crystals. Experimental results from the measurement of energy spectra after charge-sharing addition (CSA) and from 2D X-ray mapping highlight the better charge-collection properties of HF-CZT detectors near the inter-pixel gaps. The successful mitigation of the effects of incomplete charge collection after CSA was also performed through original charge-sharing correction techniques. These activities exist in the framework of international collaboration on the development of energy-resolved X-ray scanners for medical applications and non-destructive testing in the food industry