Correlation of CD34+ Hematopoietic Stem Cells and CFU in Peripheral Blood Apheresis Products in Patients with Malignant Lymphoproliferative Diseases Before and After Cryopreservation Prior to auto-HSCT

Aim. To establish correlation between CD34+ autologous hematopoietic stem cell (HSC) count and colony-forming units (CFU) in the same peripheral blood apheresis product samples before and after cryopreservation in multiple myeloma and lymphoma patients, and to assess clinical value of these parameters. Materials & Methods. Cell samples of peripheral blood cytapheresis product and cell cultures were studied before and after cryopreservation in 32 multiple myeloma and 25 lymphoma patients who underwent autologous HSC transplantation. The material was analyzed using culture technique and flow cytometry. Results. The paper provides information on the relationship between CD34+ HSC count obtained by flow cytometry, and CFU in cell culture obtained by cytapheresis of the same peripheral blood samples. A direct correlation was confirmed between CD34+ count and all the CFUs before and after cryopreservation in lymphoma patients. Correlation between CD34+ count and granulocyte-macrophage CFUs was revealed in multiple myeloma and lymphoma patients before cryopreservation. Conclusion. The parameter of colony-forming capacity used for the assessment of the functional HSC was shown to be equally reliable criterion for condition evaluation of autotransplant proliferative pool than CD34+ cells. Both methods should be applied for qualitative and quantitative evaluation of an autotransplant for multiple myeloma and lymphoma patients

Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct Bonding

A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si(1-x)Ge(x) wafers cut from Czochralski-grown crystals, is suggested. Si(1-x)Ge(x) layers no larger than 10 mu m thick in SiGe/SiO(2)/Si compositions were fabricated by chemical mechanical polishing. To increase the Ge content in the Si(1-x)Ge(x) layer, thermal oxidation was used. It was shown that the increase in the Ge content and heat treatment procedures at 1250 degrees C are not accompanied by degradation of structural and electrical characteristics of Si(1-x)Ge(x) layers.X1111sciescopu