Secondary spin current driven efficient THz spintronic emitters

Femtosecond laser-induced photoexcitation of ferromagnet (FM)/heavy metal (HM) heterostructures have attracted attention by emitting broadband terahertz frequencies. The phenomenon relies on the formation of ultrafast spin current, which is largely attributed to the direct photoexcitation of the FM layer. However, we reveal that during the process, the FM layer also experiences a secondary excitation led by the hot electrons from the HM layer that travel across the FM/HM interface and transfer additional energy in the FM. Thus, the generated secondary spins enhance the total spin current formation and lead to amplified spintronic terahertz emission. The results also emphasize the significance of the secondary spin current, which even exceeds the primary spin currents when FM/HM heterostructures with thicker HM are used. An analytical model is developed to provide deeper insights into the microscopic processes within the individual layers, underlining the generalized ultrafast superdiffusive spin-transport mechanism.Comment: 20 pages, 3 figure

薬剤性過敏症症候群(DIHS)の皮疹部においてCD3陽性T細胞数に対するFoxP3陽性制御性T細胞数の割合は増加している

博士（医学）・甲第604号・平成25年11月27日© 2014 British Association of Dermatologists / The definitive version is available at http://onlinelibrary.wiley.com

Unconventional spin polarization at Argon ion milled SrTiO3 Interfaces

Interfacial two-dimensional electron gas (2DEG) formed at the perovskite-type oxide, such as SrTiO3, has attracted significant attention due to its properties of ferromagnetism, superconductivity, and its potential application in oxide-based low-power consumption electronics. Recent studies have investigated spin-to-charge conversion at the STO interface with different materials, which could affect the efficiency of this 2DEG interface. In this report, we presented an Ar^+ ion milling method to create a 2DEG at STO directly by inducing oxygen vacancies. To quantify the spin-to-charge conversion of this interface, we measured the angular-dependent spin-torque ferromagnetic resonance (ST-FMR) spectra, revealing an unconventional spin polarization at the interface of Argon ion-milled STO and NiFe. Furthermore, a micromagnetic simulation for angular-dependent spin-torque ferromagnetic resonance (ST-FMR) has been performed, confirming the large unconventional spin polarization at the interface

Room temperature charge-to-spin conversion from q-2DEG at SrTiO3-based interfaces

Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient charge-spin current interconversion. In this article, to gain insight into the mechanism of the charge-spin current interconversion at the oxide-based 2DEG, we focused on conducting interfaces between insulating SrTiO3 and two types of aluminium-based amorphous insulators, namely SrTiO3/AlN and SrTiO3/Al2O3, and estimated their charge-spin conversion efficiency, {\theta}_cs. The two types of amorphous insulators were selected to explicitly probe the overlooked contribution of oxygen vacancy to the {\theta}_cs. We proposed a mechanism to explain results of spin-torque ferromagnetic resonance (ST-FMR) measurements and developed an analysis protocol to reliably estimate the {\theta}_cs of the oxide based 2DEG. The resultant {\theta}_cs/t, where t is the thickness of the 2DEG, were estimated to be 0.244 nm-1 and 0.101 nm-1 for the SrTiO3/AlN and SrTiO3/Al2O3, respectively, and they are strikingly comparable to their crystalline counterparts. Furthermore, we also observe a large direct current modulation of resonance linewidth in SrTiO3/AlN samples, confirming its high {\theta}_cs and attesting an oxygen-vacancy-enabled charge-spin conversion. Our findings emphasize the defects' contribution to the charge-spin interconversion, especially in the oxide-based low dimensional systems, and provide a way to create and enhance charge-spin interconversion via defect engineering

Disentanglement of intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt

The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in damping-like torque efficiency {\theta}_DL due to the modified SHE, but the mechanism behind this enhancement is not clear. In this paper, we study {\theta}_DL at different temperatures (100-293 K) to disentangle the intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt. We observe a crossover of intrinsic to extrinsic side-jump mechanism as the implantation dose increases from 2*10^16 ions/cm2 to 1*10^17 ions/cm2. A sudden decrease in the intrinsic spin Hall conductivity is counterbalanced by the increase in the side-jump induced SHE efficiency. These results conclude that studying {\theta}_DL as a function of implantation dose, and also as a function of temperature, is important to understand the physical mechanism contributing to SHE, which has so far been unexplored in incorporating non-metallic element in 5d transition metals

Dense plasma irradiated platinum with improved spin Hall effect

The impurity incorporation in host high-spin orbit coupling materials like platinum has shown improved charge-to-spin conversion by modifying the up-spin and down-spin electron trajectories by bending or skewing them in opposite directions. This enables efficient generation, manipulation, and transport of spin currents. In this study, we irradiate the platinum with non-focus dense plasma to incorporate the oxygen ion species. We systematically analyze the spin Hall angle of the oxygen plasma irradiated Pt films using spin torque ferromagnetic resonance. Our results demonstrate a 2.4 times enhancement in the spin Hall effect after plasma treatment of Pt as compared to pristine Pt. This improvement is attributed to the introduction of disorder and defects in the Pt lattice, which enhances the spin-orbit coupling and leads to more efficient charge-to-spin conversion without breaking the spin-orbit torque symmetries. Our findings offer a new method of dense plasma-based modification of material for the development of advanced spintronic devices based on Pt and other heavy metals

Ultrafast photo-thermal switching of terahertz spin currents

Dissipationless and scattering-free spin-based terahertz electronics is the futuristic technology for energy-efficient information processing. Femtosecond light pulse provides an ideal pathway for exciting the ferromagnet (FM) out-of-equilibrium, causing ultrafast demagnetization and superdiffusive spin transport at sub-picosecond timescale, giving rise to transient terahertz radiation. Concomitantly, light pulses also deposit thermal energy at short timescales, suggesting the possibility of abrupt change in magnetic anisotropy of the FM that could cause ultrafast photo-thermal switching (PTS) of terahertz spin currents. Here, a single light pulse induced PTS of the terahertz spin current manifested through the phase reversal of the emitted terahertz photons is demonstrated. The switching of the transient spin current is due to the reversal of the magnetization state across the energy barrier of the FM layer. This demonstration opens a new paradigm for on-chip spintronic devices enabling ultralow-power hybrid electronics and photonics fueled by the interplay of charge, spin, thermal, and optical signals

zTrap: zebrafish gene trap and enhancer trap database

<p>Abstract</p> <p>Background</p> <p>We have developed genetic methods in zebrafish by using the <it>Tol2 </it>transposable element; namely, transgenesis, gene trapping, enhancer trapping and the Gal4FF-UAS system. Gene trap constructs contain a splice acceptor and the GFP or Gal4FF (a modified version of the yeast Gal4 transcription activator) gene, and enhancer trap constructs contain the zebrafish <it>hsp70l </it>promoter and the GFP or Gal4FF gene. By performing genetic screens using these constructs, we have generated transgenic zebrafish that express GFP and Gal4FF in specific cells, tissues and organs. Gal4FF expression is visualized by creating double transgenic fish carrying a Gal4FF transgene and the GFP reporter gene placed downstream of the Gal4-recognition sequence (UAS). Further, the Gal4FF-expressing cells can be manipulated by mating with UAS effector fish. For instance, when fish expressing Gal4FF in specific neurons are crossed with the UAS:TeTxLC fish carrying the tetanus neurotoxin gene downstream of UAS, the neuronal activities are inhibited in the double transgenic fish. Thus, these transgenic fish are useful to study developmental biology and neurobiology.</p> <p>Description</p> <p>To increase the usefulness of the transgenic fish resource, we developed a web-based database named <it>z</it>Trap <url>http://kawakami.lab.nig.ac.jp/ztrap/</url>. The <it>z</it>Trap database contains images of GFP and Gal4FF expression patterns, and genomic DNA sequences surrounding the integration sites of the gene trap and enhancer trap constructs. The integration sites are mapped onto the <it>Ensembl </it>zebrafish genome by in-house Blat analysis and can be viewed on the <it>z</it>Trap and <it>Ensembl </it>genome browsers. Furthermore, <it>z</it>Trap is equipped with the functionality to search these data for expression patterns and genomic loci of interest. <it>z</it>Trap contains the information about transgenic fish including UAS reporter and effector fish.</p> <p>Conclusion</p> <p><it>z</it>Trap is a useful resource to find gene trap and enhancer trap fish lines that express GFP and Gal4FF in desired patterns, and to find insertions of the gene trap and enhancer trap constructs that are located within or near genes of interest. These transgenic fish can be utilized to observe specific cell types during embryogenesis, to manipulate their functions, and to discover novel genes and <it>cis</it>-regulatory elements. Therefore, <it>z</it>Trap should facilitate studies on genomics, developmental biology and neurobiology utilizing the transgenic zebrafish resource.</p

血清TARC/CCL17値は薬剤性過敏症症候群(DIHS) の早期診断および病勢の指標となりうる。

BACKGROUND:Drug-induced hypersensitivity syndrome (DIHS)/drug rash with eosinophilia and systemic symptoms (DRESS) is a serious acute drug reaction with fever, cutaneous eruption, lymphadenopathy, and several visceral dysfunctions. Eosinophilia is a common hematological abnormality in DIHS/DRESS suggesting that the Th2-type immune response is involved. Thymus and activation-regulated chemokine (TARC/CCL17) is a family of CC chemokines known to play an important role in Th2-mediated immune-inflammatory processes. OBJECTIVE:We investigated the pathogenic role of TARC in patients with DIHS. METHODS:Sera were obtained from 8 patients with DIHS, 7 patients with Stevens-Johnson syndrome/Toxic epidermal necrolysis (SJS/TEN), and 14 patients with drug-induced maculopapular exanthema (MPE). Serum TARC levels were measured by ELISA. TARC levels were then compared with clinical symptoms and various hematological parameters. In addition, a biopsy was taken from the lesional skin of patients with DIHS and stained with anti-TARC Ab and anti-CD11c Ab. RESULTS:Serum TARC levels in patients with DIHS were significantly higher than those in patients with SJS/TEN and MPE during the acute phase. Serum TARC levels in DIHS patients correlated with skin eruptions, serum sIL-2R levels, eosinophil counts, and serum IL-5 levels. Immunohistochemical staining revealed that TARC was mainly expressed on CD11c+ dermal dendritic cells in patients with DIHS. CONCLUSION:Serum TARC levels may be associated with the initial presentation of DIHS as well as disease activity during the course. Thus, they could be useful as an indicator for early diagnosis and assessment of disease activity in DIHS. CD11c+ dendritic cells may be the main source of TARC in patients with DIHS.博士（医学）・甲第597号・平成25年3月15日Copyright © 2012 Japanese Society for Investigative Dermatology. Published by Elsevier Ireland Ltd. All rights reserved

Facet controlled anisotropic magnons in Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> thin films

Directional specific control on the generation and propagation of magnons is essential for designing future magnon-based logic and memory devices for low power computing. The epitaxy of the ferromagnetic thin film is expected to facilitate anisotropic linewidths, which depend on the crystal cut and the orientation of the thin film. Here, we have shown the growth-induced magneto-crystalline anisotropy in 40 nm epitaxial yttrium iron garnet (YIG) thin films, which facilitate cubic and uniaxial in-plane anisotropy in the resonance field and linewidth using ferromagnetic resonance measurements. The growth-induced cubic and non-cubic anisotropy in epitaxial YIG thin films are explained using the short-range ordering of the Fe3þ cation pairs in octahedral and tetrahedral sublattices with respect to the crystal growth directions. This site-preferred directional anisotropy enables an anisotropic magnon–magnon interaction and opens an avenue to precisely control the propagation of magnonic current for spin-transfer logics using YIG-based magnonic technology