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1 research outputs found
Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction
Author
A Bouhdada
A Pal
+41Â more
AS Shoormasti
AVG Chizmeshy
B Dutt
CG Van de Walle
EO Kane
EO Kane
G He
G-E Chang
H Ferhati
H Lu
H Wang
J Menendez
J Wan
K Boucart
KK Bhuwalka
L Jiang
L Wang
M Bauer
M Chandrasekhar
MG Bardon
MK Anvarifard
MK Anvarifard
MR Uddin Shaikh
N Shaw
OM Nayfeh
P Vimala
PK Basu
Qin Zhang
R Gandhi
R Roucka
S Dey
S Garg
S Saurabh
Shelly Garg
SL Chuang
TS Arun Samuel
Upasana
VR D’Costa
WY Choi
X Liu
Y Taur
Publication venue
'Springer Science and Business Media LLC'
Publication date
Field of study
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