10 research outputs found
Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field
Conventional computer electronics creates a dichotomy between how information
is processed and how it is stored. Silicon chips process information by
controlling the flow of charge through a network of logic gates. This
information is then stored, most commonly, by encoding it in the orientation of
magnetic domains of a computer hard disk. The key obstacle to a more intimate
integration of magnetic materials into devices and circuit processing
information is a lack of efficient means to control their magnetization. This
is usually achieved with an external magnetic field or by the injection of
spin-polarized currents. The latter can be significantly enhanced in materials
whose ferromagnetic properties are mediated by charge carriers. Among these
materials, conductors lacking spatial inversion symmetry couple charge currents
to spin by intrinsic spin-orbit (SO) interactions, inducing nonequilibrium spin
polarization tunable by local electric fields. Here we show that magnetization
of a ferromagnet can be reversibly manipulated by the SO-induced polarization
of carrier spins generated by unpolarized currents. Specifically, we
demonstrate domain rotation and hysteretic switching of magnetization between
two orthogonal easy axes in a model ferromagnetic semiconductor.Comment: 10 pages including supplemental materia
On the Chemical Origin of the Gap Bowing in (GaAs)1âxGe2x Alloys: A Combined DFTâQSGW Study
Motivated by the research and analysis of new materials for photovoltaics and by the possibility of tailoring their optical properties for improved solar energy conversion, we have focused our attention on the (GaAs)1âxGe2x series of alloys. We have investigated the structural properties of some (GaAs)1âxGe2x compounds within the local-density approximation to density-functional theory, and their optical properties within the Quasiparticle Self-consistent GW approximation. The QSGW results confirm the experimental evidence of asymmetric bandgap bowing. It is explained in terms of violations of the octet rule, as well as in terms of the orderâdisorder phase transition
First-principles quantum transport modeling of spin-transfer and spin-orbit torques in magnetic multilayers
We review a unified approach for computing: (i) spin-transfer torque in
magnetic trilayers like spin-valves and magnetic tunnel junction, where
injected charge current flows perpendicularly to interfaces; and (ii)
spin-orbit torque in magnetic bilayers of the type
ferromagnet/spin-orbit-coupled-material, where injected charge current flows
parallel to the interface. Our approach requires to construct the torque
operator for a given Hamiltonian of the device and the steady-state
nonequilibrium density matrix, where the latter is expressed in terms of the
nonequilibrium Green's functions and split into three contributions. Tracing
these contributions with the torque operator automatically yields field-like
and damping-like components of spin-transfer torque or spin-orbit torque
vector, which is particularly advantageous for spin-orbit torque where the
direction of these components depends on the unknown-in-advance orientation of
the current-driven nonequilibrium spin density in the presence of spin-orbit
coupling. We provide illustrative examples by computing spin-transfer torque in
a one-dimensional toy model of a magnetic tunnel junction and realistic
Co/Cu/Co spin-valve, both of which are described by first-principles
Hamiltonians obtained from noncollinear density functional theory calculations;
as well as spin-orbit torque in a ferromagnetic layer described by a
tight-binding Hamiltonian which includes spin-orbit proximity effect within
ferromagnetic monolayers assumed to be generated by the adjacent monolayer
transition metal dichalcogenide.Comment: 22 pages, 9 figures, PDFLaTeX; prepared for Springer Handbook of
Materials Modeling, Volume 2 Applications: Current and Emerging Material