Differential in complementary prisms

Let G = (V, E) be a graph of order n and let B(D) be the set of vertices in V\D that have a neighbor in the set D. The differential of a set D is defined as partial differential (D) = |B(D)| - |D| and the differential of a graph to equal the maximum value of partial differential (D) for any subset D of V. A set D of vertices of a graph G is said to be a dominating set if every vertex in V\D is adjacent to a vertex in D. G is a dominant differential graph if it contains a partial differential -set which is also a dominating set. Let G? be the complement of a graph G. The complementary prism GG? of G is the graph formed from the disjoint union of G and G? by adding the edges of a perfect matching between the corresponding vertices of G and G?. This paper is devoted to the computation of differential of complementary prisms GG?. Particular attention is given to the complementary prims of special types of graphs and dominant differential complementary prisms are recognized. Furthermore, a sharp lower bound on the differential of the complementary prism GG? of a graph G in terms of the order of G is presented and the graphs attaining this lower bound are characterized. Finally, the graphs G are characterized for which partial differential (GG?) is small

Differential in infrastructure networks

Let G = (V, E) be a graph of order n and let B(D) be the set of vertices in V \ D that have a neighbor in the vertex set D. The differential of a vertex set D is defined as ∂(D) = |B(D)| − |D| and the maximum value of ∂(D) for any subset D of V is the differential of G. A set D of vertices of a graph G is said to be a dominating set if every vertex in V \ D is adjacent to a vertex in D. G is a dominant differential graph if it contains a ∂-set which is also a dominating set. This paper is devoted to the computation of differential of wheel, cycle and path-related graphs as infrastructure networks. Furthermore, dominant differential wheel, cycle and path-related types of networks are recognized

Performance evaluation of a GaInP/GaAs solar cell structure with the integration of AlGaAs tunnel junction

A GaInP/GaAs solar cell structure with AlGaAs tunnel junction was grown on p-type (1 0 0)-oriented GaAs substrate by a solid-source molecular beam epitaxy technique. The structural and morphological properties of the GaInP/GaAs solar cell structure have been evaluated by means of secondary ion mass spectrometry and atomic force microscopy measurements. In addition, the GaInP/GaAs solar cell device was fabricated to obtain electrical output parameters of the cells. For this purpose, the current voltage measurements of solar cell devices were carried out at room temperature under both dark and air mass 1.5 global radiation (AM1.5) using solar simulator. In addition, the electrical output parameters of the GaInP/GaAs solar cell structure with the AlGaAs tunnel junction are compared with the GaInP/GaAs solar cell structure without the AlGaAs tunnel junction, and it is found that the integration of the tunnel junction into a solar cell structure improves the device performance by 48%. (C) 2015 Elsevier B.V. All rights reserved

AZO thin film-based UV sensors: effects of RF power on the films

Al-doped zinc oxide (AZO) thin films of thickness 150 nm were deposited on polyethylene terephthalate (PET) substrates by radio frequency (RF) magnetron sputtering method under various RF powers in the range of 25-100 W. Structural, morphological, optical and electrical properties of the films were investigated by X-ray diffractometer, atomic force microscope, UV-Vis spectrometer and Hall effect measurement system. All the obtained films had a highly preferred orientation along [002] direction of the c-axis perpendicular to the flexible PET substrate and had a high-quality surface. The energy band gap (E-g) values of the films varied in the range of 3.30-3.43 eV. The minimum resistivity of 1.84 x 10(-4) Omega cm was obtained at a 50 W RF power. The small changes in the RF power had a critical important role on the structural, optical and electrical properties of the sputtered AZO thin films on flexible PET substrate. In addition, UV sensing of the fabricated AZO thin film-based sensors was explored by using current-voltage (I-V) characteristics. The sensors were sensitive in the UV region of the electromagnetic spectrum