660 research outputs found
Optical Conductivity of Ferromagnetic Semiconductors
The dynamical mean field method is used to calculate the frequency and
temperature dependent conductivity of dilute magnetic semiconductors.
Characteristic qualitative features are found distinguishing weak,
intermediate, and strong carrier-spin coupling and allowing quantitative
determination of important parameters defining the underlying ferromagnetic
mechanism
Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
We formulate a theory of doped magnetic semiconductors such as
GaMnAs which have attracted recent attention for their possible use
in spintronic applications. We solve the theory in the dynamical mean field
approximation to find the magnetic transition temperature as a function
of magnetic coupling strength and carrier density . We find that
is determined by a subtle interplay between carrier density and magnetic
coupling.Comment: 4 pages, 4 figure
Observation of the spin-charge thermal isolation of ferromagnetic Ga_{0.94}Mn_{0.06}As by time-resolved magneto-optical measurement
The dynamics of magnetization under femtosecond optical excitation is studied
in a ferromagnetic semiconductor Ga_{0.94}Mn_{0.06}As with a time-resolved
magneto-optical Kerr effect measurement with two color probe beams. The
transient reflectivity change indicates the rapid rise of the carrier
temperature and relaxation to a quasi-thermal equilibrium within 1 ps, while a
very slow rise of the spin temperature of the order of 500ps is observed. This
anomalous behavior originates from the thermal isolation between the charge and
spin systems due to the spin polarization of carriers (holes) contributing to
ferromagnetism. This constitutes experimental proof of the half-metallic nature
of ferromagnetic Ga_{0.94}Mn_{0.06}As arising from double exchange type
mechanism originates from the d-band character of holes
Polaron percolation in diluted magnetic semiconductors
We theoretically study the development of spontaneous magnetization in
diluted magnetic semiconductors as arising from a percolation of bound magnetic
polarons. Within the framework of a generalized percolation theory we derive
analytic expressions for the Curie temperature and the magnetization, obtaining
excellent quantitative agreement with Monte Carlo simulation results and good
qualitative agreement with experimental results.Comment: 5 page
Half-metallic Antiferromagnet BaCrFeAs2
First-principles calculations and a tight-binding analysis predict that the
iron-pnictide BaCrFeAs2 is a promising candidate for half-metallic material
with fully-compensated magnetization. The transition-metal ions Cr and Fe
prefer the three-dimensional intervening lattice, which yields the
antiferromagnetic order of spin orientations. Due to the difference between Cr
and Fe in the electronegativity, a band gap is opened at the Fermi level in the
spin channel in which Fe provides the majority carriers. The selective
hybridization between 3d orbitals of Cr and As:4p states due to the peculiar
lattice structure of the iron-pnictide is shown to be crucial for the novel
properties.Comment: added reference
Ferromagnetism in laser deposited anatase TiCoO_{2-\delta} films
Pulsed laser deposited films of Co doped anatase TiO2 are examined for Co
substitutionality, ferromagnetism, transport, magnetotransport and optical
properties. Our results show limited solubility (up to ~ 2 %) of Co in the
as-grown films and formation of Co clusters thereafter. For Ti0.93Co0.07O2-d
sample, which exhibits a Curie temperature (Tc) over 1180 K, we find the
presence of 20-50 nm Co clusters as well as a small concentration of Co
incorporated into the remaining matrix. After being subjected to the high
temperature anneal during the first magnetization measurement, the very same
sample shows a Tc ~ 650 K and almost full matrix incorporation of Co. This Tc
is close to that of as-grown Ti0.99Co0.01O2-d sample (~ 700 K). The transport,
magnetotransport and optical studies also reveal interesting effects of the
matrix incorporation of Co. These results are indicative of an intrinsic
Ti1-xCoxO2-d diluted magnetic semiconductor with Tc of about 650-700 K.Comment: 14 pages + 9 figure
A search for ferromagnetism in transition-metal-doped piezoelectric ZnO
We present the results of a computational study of ZnO in the presence of Co
and Mn substitutional impurities. The goal of our work is to identify potential
ferromagnetic ground states within the (Zn,Co)O or (Zn,Mn)O material systems
that are also good candidates for piezoelectricity. We find that, in contrast
to previous results, robust ferromagnetism is not obtained by substitution of
Co or Mn on the Zn site, unless additional carriers (holes) are also
incorporated. We propose a practical scheme for achieving such -type doping
in ZnO
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