High temperature optical absorption investigation into the electronic transitions in sol–gel derived C12A7 thin films

Optical absorption into 6 mm thick sol–gel derived films, annealed at 1300 °C of 12CaO·7Al2O3 calcium aluminate binary compound on MgO〈100〉 single crystal substrates was studied at temperatures ranging from room temperature to 300 °C. Experimental data were analysed in both Tauc and Urbach regions. The optical band gap decreased from 4.088 eV at 25 °C to 4.051 eV at 300 °C, while Urbach energy increased from 0.191 eV at 25 °C to 0.257 eV at 300 °C. The relationship between the optical band gap and the Urbach energy at different temperatures showed an almost linear relationship from which the theoretical values of 4.156 and 0.065 eV were evaluated for the band gap energy and Urbach energy of a 12CaO·7Al2O3 crystal with zero structural disorder at 0 K

Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7

The ternary compound Cs2Hg6S7 has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs2Hg6S7 using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10(-20)-10(-15) cm(2).close0