37 research outputs found
Interference-based molecular transistors
Molecular transistors have the potential for switching with lower gate
voltages than conventional field-effect transistors. We have calculated the
performance of a single-molecule device in which there is interference between
electron transport through the highest occupied molecular orbital and the
lowest unoccupied molecular orbital of a single molecule. Quantum interference
results in a subthreshold slope that is independent of temperature. For
realistic parameters the change in gate potential required for a change in
source-drain current of two decades is 20 mV, which is a factor of six smaller
than the theoretical limit for a metal-oxide-semiconductor field-effect
transistor