28 research outputs found

    Spin injection into a ballistic semiconductor microstructure

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    A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient Îł\gamma is suppressed by the Sharvin resistance of the semiconductor rN∗=(h/e2)(π2/SN)r_N^*=(h/e^2)(\pi^2/S_N), where SNS_N is the Fermi-surface cross-section. It competes with the diffusion resistances of the ferromagnets rFr_F, and ÎłâˆŒrF/rN∗â‰Ș1\gamma\sim r_F/r_N^*\ll 1 in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulae for the junction resistance and the spin-valve effect are presented.Comment: 5 pages, 2 column REVTeX. Explicit prescription relating the results of the ballistic and diffusive theories of spin injection is added. To this end, some notations are changed. Three references added, typos correcte

    Spin-dependent tunnelling through a symmetric barrier

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    The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k3k^3 Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.Comment: 3 pages, Submitted to Phys. Rev.

    Measurement of a small atmospheric ΜΌ/Μe\nu_\mu/\nu_e ratio

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    From an exposure of 25.5~kiloton-years of the Super-Kamiokande detector, 900 muon-like and 983 electron-like single-ring atmospheric neutrino interactions were detected with momentum pe>100p_e > 100 MeV/cc, pΌ>200p_\mu > 200 MeV/cc, and with visible energy less than 1.33 GeV. Using a detailed Monte Carlo simulation, the ratio (Ό/e)DATA/(Ό/e)MC(\mu/e)_{DATA}/(\mu/e)_{MC} was measured to be 0.61±0.03(stat.)±0.05(sys.)0.61 \pm 0.03(stat.) \pm 0.05(sys.), consistent with previous results from the Kamiokande, IMB and Soudan-2 experiments, and smaller than expected from theoretical models of atmospheric neutrino production.Comment: 14 pages with 5 figure

    Theory of spin-polarized bipolar transport in magnetic p-n junctions

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    The interplay between spin and charge transport in electrically and magnetically inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory of spin-polarized bipolar transport in magnetic p-n junctions is formulated, generalizing the classic Shockley model. The theory assumes that in the depletion layer the nonequilibrium chemical potentials of spin up and spin down carriers are constant and carrier recombination and spin relaxation are inhibited. Under the general conditions of an applied bias and externally injected (source) spin, the model formulates analytically carrier and spin transport in magnetic p-n junctions at low bias. The evaluation of the carrier and spin densities at the depletion layer establishes the necessary boundary conditions for solving the diffusive transport equations in the bulk regions separately, thus greatly simplifying the problem. The carrier and spin density and current profiles in the bulk regions are calculated and the I-V characteristics of the junction are obtained. It is demonstrated that spin injection through the depletion layer of a magnetic p-n junction is not possible unless nonequilibrium spin accumulates in the bulk regions--either by external spin injection or by the application of a large bias. Implications of the theory for majority spin injection across the depletion layer, minority spin pumping and spin amplification, giant magnetoresistance, spin-voltaic effect, biasing electrode spin injection, and magnetic drift in the bulk regions are discussed in details, and illustrated using the example of a GaAs based magnetic p-n junction.Comment: 36 pages, 11 figures, 2 table

    Calibration of Super-Kamiokande Using an Electron Linac

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    In order to calibrate the Super-Kamiokande experiment for solar neutrino measurements, a linear accelerator (LINAC) for electrons was installed at the detector. LINAC data were taken at various positions in the detector volume, tracking the detector response in the variables relevant to solar neutrino analysis. In particular, the absolute energy scale is now known with less than 1 percent uncertainty.Comment: 24 pages, 16 figures, Submitted to NIM

    Measurement of radon concentrations at Super-Kamiokande

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    Radioactivity from radon is a major background for observing solar neutrinos at Super-Kamiokande. In this paper, we describe the measurement of radon concentrations at Super-Kamiokande, the method of radon reduction, and the radon monitoring system. The measurement shows that the current low-energy event rate between 5.0 MeV and 6.5 MeV implies a radon concentration in the Super-Kamiokande water of less than 1.4 mBq/m3^3.Comment: 11 pages, 4 figure

    Electron Spin Polarization in Resonant Interband Tunneling Devices

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    We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin polarized electrons injected into bulk InAs make spin resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.Comment: 11 pages, 4 eps figure
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