14 research outputs found
Magnetic-field dependence of electron spin relaxation in n-type semiconductors
We present a theoretical investigation of the magnetic field dependence of
the longitudinal () and transverse () spin relaxation times of
conduction band electrons in n-type III-V semiconductors. In particular, we
find that the interplay between the Dyakonov-Perel process and an additional
spin relaxation channel, which originates from the electron wave vector
dependence of the electron -factor, yields a maximal at a finite
magnetic field. We compare our results with existing experimental data on
n-type GaAs and make specific additional predictions for the magnetic field
dependence of electron spin lifetimes.Comment: accepted for publication in PRB, minor changes to previous manuscrip