Quasi-classical cyclotron resonance of Dirac fermions in highly doped graphene

Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties of graphene in the quantum regime, here we study the quasi-classical response of this system. We show that it has a character of classical cyclotron resonance, with an energy which is linear in the applied magnetic field and with an effective cyclotron mass defined by the position of the Fermi level m = E_F/v_F^2.Comment: 6 pages, 4 figure

Direction-sensitive graphene flow sensor

Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel approach allowing for the detection of a flow direction-dependent electric signal in aqueous solutions of salts, acids and bases. The key element in the proposed solution is the use of a reference electrode which allows external gating of the graphene structure. Using external gating enables to enhance substantially the amplitude of the flow-generated signal. Simultaneous measurement of the reference electrode current allows us to recover a flow-direction-sensitive component of the flow-induced voltage in graphene. The obtained results are discussed in terms of the Coulomb interaction and other phenomena which can be present at the interface of graphene with the aqueous solution.Comment: 7 pages, 6 figure

Raman scattering from the bulk inactive out-of-plane B2g1^{1}_{2\text{g}} mode in few-layer MoTe2_{2}

Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energy components is recorded at low temperature for 1.91 eV and 1.96 eV laser excitation. We discuss the attribution of the peaks to the inner modes of the respective Raman-active vibrations. The temperature evolution of their intensity strongly suggests a resonant character of the employed excitation, which leads to the mode enhancement at low temperature. The resonance of the laser light with the singularity of the electronic density of states at the $M$ point of the Brillouin zone in MoTe$_{2}$ is proposed to be responsible for the observed effects.Comment: 10 pages, 5 figure

Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides

Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, $i.e.$ in-plane E$'$ and out-of-plane A$'_1$, but the appearance of 1$^{st}$, 2$^{nd}$, and higher-order phonon modes is recognised. The intensity profiles of the A$'_1$ modes in the investigated MLs resemble the emissions due to neutral excitons measured in the corresponding PL spectra for the outgoing type of resonant Raman scattering conditions. Furthermore, for the WSe$_2$ ML, the A$'_1$ mode was observed when the incoming light was in resonance with the neutral exciton line. The strength of the exciton-phonon coupling (EPC) in S-TMD MLs strongly depends on the type of their ground excitonic state, $i.e.$ bright or dark, resulting in different shapes of the RSE spectra. Our results demonstrate that RSE spectroscopy is a powerful technique for studying EPC in S-TMD MLs.Comment: 9 pages, 6 figures, ES

Fifth European Dirofilaria and Angiostrongylus Days (FiEDAD) 2016

Peer reviewe

Minimal information for studies of extracellular vesicles (MISEV2023): From basic to advanced approaches

Extracellular vesicles (EVs), through their complex cargo, can reflect the state of their cell of origin and change the functions and phenotypes of other cells. These features indicate strong biomarker and therapeutic potential and have generated broad interest, as evidenced by the steady year-on-year increase in the numbers of scientific publications about EVs. Important advances have been made in EV metrology and in understanding and applying EV biology. However, hurdles remain to realising the potential of EVs in domains ranging from basic biology to clinical applications due to challenges in EV nomenclature, separation from non-vesicular extracellular particles, characterisation and functional studies. To address the challenges and opportunities in this rapidly evolving field, the International Society for Extracellular Vesicles (ISEV) updates its 'Minimal Information for Studies of Extracellular Vesicles', which was first published in 2014 and then in 2018 as MISEV2014 and MISEV2018, respectively. The goal of the current document, MISEV2023, is to provide researchers with an updated snapshot of available approaches and their advantages and limitations for production, separation and characterisation of EVs from multiple sources, including cell culture, body fluids and solid tissues. In addition to presenting the latest state of the art in basic principles of EV research, this document also covers advanced techniques and approaches that are currently expanding the boundaries of the field. MISEV2023 also includes new sections on EV release and uptake and a brief discussion of in vivo approaches to study EVs. Compiling feedback from ISEV expert task forces and more than 1000 researchers, this document conveys the current state of EV research to facilitate robust scientific discoveries and move the field forward even more rapidly

Magnetized Plasma in Polar Semiconductors

Plasma excitations in metallic n-type GaAs are studied in high-magnetic fields using the method of inelastic light scattering (the Raman scattering). Experimental data are analyzed using a standard, dielectric function theory. The results obtained for samples with a high electron concentration are well understood in terms of longitudinal excitations. A strong interaction of coupled longitudinal optical-phonon-plasmon modes with the collective cyclotron resonance excitations (the Bernstein modes) is observed. In samples with a lower electron concentration, the unexpected feature in the vicinity of the undressed optical phonon is observed at high magnetic fields. This effect is explained in terms of transverse excitations, which would appear in the Raman spectrum due to disorder-activated selection-rule breaking. A field induced metal-insulator transition and magnetopolaron effect on shallow donors in GaAs is shown to be traced with the Raman scattering experiments in samples with the lowest electron concentration

Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress

The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect