Changes in surface properties of PI/WO₂ сoatings after vacuum ultraviolet irradiation

This paper presents the results of a study on the effects of deep vacuum and vacuum ultraviolet (VUV) irradiation on polymer сoatings based on thermoplastic polyimide (PI) and tungsten oxide (WO₂

Synthesis of PI/POSS nanocomposite films based on track nuclear membranes and assessment of their resistance to oxygen plasma flow

This work presents, for the first time, data on the possibility of synthesizing polyimide nanocomposite films based on track nuclear membranes and organosiloxane (polyhedral oligomeric silsesquioxanes) POSS structures. The synthesis of the nanocomposite films was carried out by filling the tracks of a polyimide membrane with POSS structures under hydrothermal conditions in a high-pressure reactor. The surface and mechanical characteristics of the developed nanocomposite films were studied, and the results of their resistance to the flow of oxygen plasma are presente

Photoluminescence of Er3+\text{}^{3+} near 1.54μm in Silicon-Rich Silicon Oxide Films

Excitation of the intra-4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. Silicon-rich silicon oxide was produced by high dose implantation of Si$\text{}^{+}$ ions into SiO$\text{}_{2}$ layers grown on silicon. Erbium doping was also performed using implantation of Er^+ ions at an energy of 800 keV. An evidence is presented that transfer of energy from defects related to excess silicon in silica is the dominant mechanism of excitation of Er$\text{}^{3+}$ for optical pumping in the UV-blue wavelength range. Si-nanocrystals created by annealing at 1100ºC rather compete for excitation with erbium than transfer energy to Er$\text{}^{3+}$

Photoluminescence of Er 3+

Excitation of the intra-4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. Silicon-rich silicon oxide was produced by high dose implantation of Si$\text{}^{+}$ ions into SiO$\text{}_{2}$ layers grown on silicon. Erbium doping was also performed using implantation of Er^+ ions at an energy of 800 keV. An evidence is presented that transfer of energy from defects related to excess silicon in silica is the dominant mechanism of excitation of Er$\text{}^{3+}$ for optical pumping in the UV-blue wavelength range. Si-nanocrystals created by annealing at 1100ºC rather compete for excitation with erbium than transfer energy to Er$\text{}^{3+}$

Plasmon-induced Purcell effect in InN/In metal-semiconductor nanocomposites

The Purcell effect, acceleration of a spontaneous emission recombination rate, has been observed in InN/In nanocomposites with buried nanoparticles of metallic In. This effect, associated with localized plasmons, is characterized by the averaged Purcell factor as high as 30-40 in the structures with large enough particles. This high value is indicative of a noticeable contribution from the emitting dipoles polarized normally to the nanoparticle surface in this system. The experimental observation of shortening of the emission lifetimes with increasing the amount of In is supported by calculations performed in a semiclassical approximation