444 research outputs found
Hole Transport in p-Type ZnO
A two-band model involving the A- and B-valence bands was adopted to analyze
the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO.
The hole transport characteristics (mobilities, and effective Hall factor) are
calculated using the ``relaxation time approximation'' as a function of
temperature. It is shown that the lattice scattering by the acoustic
deformation potential is dominant. In the calculation of the scattering rate
for ionized impurity mechanism, the activation energy of 100 or 170 meV is used
at different compensation ratios between donor and acceptor concentrations. The
theoretical Hall mobility at acceptor concentration of
cm is about 70 cmVs with the activation energy of 100 meV
and the compensation ratio of 0.8 at 300 K. We also found that the compensation
ratios conspicuously affected the Hall mobilities.Comment: 5page, 5 figures, accepted for publication in Jpn. J. Appl. Phy
Gallium concentration dependence of room-temperature near-bandedge luminescence in n-type ZnO:Ga
We investigated the optical properties of epitaxial \textit{n}-type ZnO films
grown on lattice-matched ScAlMgO substrates. As the Ga doping concentration
increased up to cm, the absorption edge showed a
systematic blueshift, consistent with the Burstein-Moss effect. A bright
near-bandedge photoluminescence (PL) could be observed even at room
temperature, the intensity of which increased monotonically as the doping
concentration was increased except for the highest doping level. It indicates
that nonradiative transitions dominate at a low doping density. Both a Stokes
shift and broadening in the PL band are monotonically increasing functions of
donor concentration, which was explained in terms of potential fluctuations
caused by the random distribution of donor impurities.Comment: accepted for publication for Applied Physics Letters 4 figure
Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias
We report on magnetotransport properties of a MgZnO/ZnO heterostructure
subjected to weak direct currents. We find that in the regime of overlapping
Landau levels, the differential resistivity acquires a quantum correction
proportional to both the square of the current and the Dingle factor. The
analysis shows that the correction to the differential resistivity is dominated
by a current-induced modification of the electron distribution function and
allows us to access both quantum and inelastic scattering rates.Comment: 4 pages, 3 figure
Temperature dependent magnetotransport around = 1/2 in ZnO heterostructures
The sequence of prominent fractional quantum Hall states up to =5/11
around =1/2 in a high mobility two-dimensional electron system confined at
oxide heterointerface (ZnO) is analyzed in terms of the composite fermion
model. The temperature dependence of \Rxx oscillations around =1/2
yields an estimation of the composite fermion effective mass, which increases
linearly with the magnetic field. This mass is of similar value to an enhanced
electron effective mass, which in itself arises from strong electron
interaction. The energy gaps of fractional states and the temperature
dependence of \Rxx at =1/2 point to large residual interactions between
composite fermions.Comment: 5 pages, 4 Figure
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