Energy Spectra for Fractional Quantum Hall States

Fractional quantum Hall states (FQHS) with the filling factor nu = p/q of q < 21 are examined and their energies are calculated. The classical Coulomb energy is evaluated among many electrons; that energy is linearly dependent on 1/nu. The residual binding energies are also evaluated. The electron pair in nearest Landau-orbitals is more affected via Coulomb transition than an electron pair in non-nearest orbitals. Each nearest electron pair can transfer to some empty orbital pair, but it cannot transfer to the other empty orbital pair because of conservation of momentum. Counting the numbers of the allowed and forbidden transitions, the binding energies are evaluated for filling factors of 126 fraction numbers. Gathering the classical Coulomb energy and the pair transition energy, we obtain the spectrum of energy versus nu. This energy spectrum elucidates the precise confinement of Hall resistance at specific fractional filling factors.Comment: 5 pages, 3 figure

Electron Depletion Due to Bias of a T-Shaped Field-Effect Transistor

A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths. The model is then improved to account for depletion and the width of the two-dimensional electron gases. The results are then compared to the experimental ones and to some approximate analytical calculations and are found to be in good agreement with them.Comment: 16 pages, LaTex (RevTex), 8 fig

Disorder mediated splitting of the cyclotron resonance in two-dimensional electron systems

We perform a direct study of the magnitude of the anomalous splitting in the cyclotron resonance (CR) of a two-dimensional electron system (2DES) as a function of sample disorder. In a series of AlGaAs/GaAs quantum wells, identical except for a range of carbon doping in the well, we find the CR splitting to vanish at high sample mobilities but to increase dramatically with increasing impurity density and electron scattering rates. This observation lends strong support to the conjecture that the non-zero wavevector, roton-like minimum in the dispersion of 2D magnetoplasmons comes into resonance with the CR, with the two modes being coupled via disorder.Comment: accepted to PRB Rapid Com

Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor

We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $\mu_{ac}^{-1} = \alpha$T indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with $\alpha$ being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations which account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D = 12-15 eV.Comment: 3 pages, 2 figures, RevTeX. Submitted to Appl Phys Let

Non-parabolicity of the conduction band of wurtzite GaN

Using cyclotron resonance, we measure the effective mass, $m$*, of electrons in AlGaN/GaN heterostructures with densities, $n_{2D}\sim 1-6\times10^{12}$cm$^{-2}$. From our extensive data, we extrapolate a band edge mass of $(0.208\pm0.002) m_e$. By comparing our $m$* data with the results of a multi-band \textbf{k.p} calculation we infer that the effect of remote bands is essential in explaining the observed conduction band non-parabolicity (NP). Our calculation of polaron mass corrections -- including finite width and screening - suggests those to be negligible. It implies that the behavior of $m*(n_{2D})$ can be understood solely in terms of NP. Finally, using our NP and polaron corrections, we are able to reduce the large scatter in the published band edge mass values

Spin texture and magnetoroton excitations at nu=1/3

Neutral spin texture (ST) excitations at nu=1/3 are directly observed for the first time by resonant inelastic light scattering. They are determined to involve two simultaneous spin flips. At low magnetic fields, the ST energy is below that of the magnetoroton minimum. With increasing in-plane magnetic field these mode energies cross at a critical ratio of the Zeeman and Coulomb energies of eta(c)=0.020 +/- 0.001. Surprisingly, the intensity of the ST mode grows with temperature in the range in which the magnetoroton modes collapse. The temperature dependence is interpreted in terms of a competition between coexisting phases supporting different excitations. We consider the role of the ST excitations in activated transport at nu=1/3

Infrared spectroscopy of Landau levels in graphene

We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show \textit{in situ} half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs are resolved. Their transition energies are proportional to $\sqrt{B}$ and the deduced band velocity is $\tilde{c}\approx1.1\times10^6$ m/s. The lack of precise scaling between different LL transitions indicates considerable contributions of many-particle effects to the infrared transition energies.Comment: 4 pages, 3 figures, to appear in Phys. Rev. Let

Measurement of Scattering Rate and Minimum Conductivity in Graphene

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from $2-15\times 10^{11}$ cm$^{-2}$. In the low carrier density limit, the conductivity exhibits values in the range of $2-12e^2/h$, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short range disorder whereas low mobility samples are dominated by long range scatterers.Comment: 4 pages 4 figure

Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression

Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time $\tau_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.Comment: 5 pages, 3 figures. submitted to Phys.Rev.

Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System

We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the density dependence as well as the polarization dependence of the spin susceptibility. It can account for the anomalous g-factors reported recently in GaAs electron and hole systems. The paramagnetic spin susceptibility increases with decreasing density as expected from theoretical calculations.Comment: 5 pages, 2 eps figures, to appear in PR