Polya's inequalities, global uniform integrability and the size of plurisubharmonic lemniscates

First we prove a new inequality comparing uniformly the relative volume of a Borel subset with respect to any given complex euclidean ball \B \sub \C^n with its relative logarithmic capacity in \C^n with respect to the same ball \B. An analoguous comparison inequality for Borel subsets of euclidean balls of any generic real subspace of \C^n is also proved. Then we give several interesting applications of these inequalities. First we obtain sharp uniform estimates on the relative size of \psh lemniscates associated to the Lelong class of \psh functions of logarithmic singularities at infinity on \C^n as well as the Cegrell class of \psh functions of bounded Monge-Amp\`ere mass on a hyperconvex domain \W \Sub \C^n. Then we also deduce new results on the global behaviour of both the Lelong class and the Cegrell class of \psh functions.Comment: 25 page

On Local Behavior of Holomorphic Functions Along Complex Submanifolds of C^N

In this paper we establish some general results on local behavior of holomorphic functions along complex submanifolds of \Co^{N}. As a corollary, we present multi-dimensional generalizations of an important result of Coman and Poletsky on Bernstein type inequalities on transcendental curves in \Co^{2}.Comment: minor changes in the formulation and the proof of Lemma 8.

Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5 Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In

Technology of fabrication of CdSxTe1-x solid solution on silicon substrate

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated

Some Problems in the Theory of Analytic Multifunctions

In this paper we give a series of open problems in the theory of pseudoconcave sets