46 research outputs found
Determination of the parameters of semiconducting CdF2:In with Schottky barriers from radio-frequency measurements
Physical properties of semiconducting CdF_2 crystals doped with In are
determined from measurements of the radio-frequency response of a sample with
Schottky barriers at frequencies 10 - 10^6 Hz. The dc conductivity, the
activation energy of the amphoteric impurity, and the total concentration of
the active In ions in CdF_2 are found through an equivalent-circuit analysis of
the frequency dependencies of the sample complex impedance at temperatures from
20 K to 300 K. Kinetic coefficients determining the thermally induced
transitions between the deep and the shallow states of the In impurity and the
barrier height between these states are obtained from the time-dependent
radio-frequency response after illumination of the material. The results on the
low-frequency conductivity in CdF_2:In are compared with submillimeter (10^{11}
- 10^{12} Hz) measurements and with room-temperature infrared measurements of
undoped CdF_2. The low-frequency impedance measurements of semiconductor
samples with Schottky barriers are shown to be a good tool for investigation of
the physical properties of semiconductors.Comment: 9 pages, 7 figure
Spin-dependent transport in p+-CdBxF2-x - n-CdF2 planar structures
The CV measurements and tunneling spectroscopy are used to study the
ballistic transport of the spin-polarized holes by varying the value of the
Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the
surface of the n-CdF2 bulk crystal. The findings of the hole conductance
oscillations in the plane of the p-type quantum well that are due to the
variations of the Rashba SOI are shown to be evidence of the spin transistor
effect, with the amplitude of the oscillations close to e2/h.Comment: 5 pages, 6 figure
Materials with Colossal Dielectric Constant: Do They Exist?
Experimental evidence is provided that colossal dielectric constants, epsilon
>= 1000, sometimes reported to exist in a broad temperature range, can often be
explained by Maxwell-Wagner type contributions of depletion layers at the
interface between sample and contacts, or at grain boundaries. We demonstrate
this on a variety of different materials. We speculate that the largest
intrinsic dielectric constant observed so far in non-ferroelectric materials is
of order 100.Comment: 3 figure