Electrical spin injection using GaCrN in a GaN based spin light emitting diode

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of similar to 2.5% is obtained at 200 K. (C) 2013 AIP Publishing LLC

Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

The electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization energy is rather small compared to values previously determined for the same material system. Similarly, a very small apparent capture cross section is measured (1·10−16 cm2). DLTS signal analysis yields an equivalent to the ensemble density of states for the individual energies as well as the density function of the confinement energies of the QDs in the ensemble