Diseño e implementación de práctica para el Laboratorio de Comunicaciones 4

Describe una serie de prácticas de Laboratorio utilizando MATLAB y el dsPIC30F4013, para el Laboratorio de Comunicaciones 4 de la carrera de Ingeniería en Electrónic

Characterization of microscopic ferromagnetic defects in thin films using magnetic microscope based on Nitrogen-Vacancy centres

In this work we present results acquired by applying magnetic field imaging technique based on NitrogenVacancy centres in diamond crystal for characterization of magnetic thin films defects. We used the constructed wide-field magnetic microscope for measurements of two kinds of magnetic defects in thin films. One family of defects under study was a result of non-optimal thin film growth conditions. The magnetic field maps of several regions of the thin films created under very similar conditions to previously published research revealed microscopic impurity islands of ferromagnetic defects, that potentially could disturb the magnetic properties of the surface. The second part of the measurements was dedicated to defects created post deposition - mechanical defects introduced in ferromagnetic thin films. In both cases, the measurements identify the magnetic field amplitude and distribution of the magnetic defects. In addition, the magnetic field maps were correlated with the corresponding optical images. As this method has great potential for quality control of different stages of magnetic thin film manufacturing process and it can rival other widely used measurement techniques, we also propose solutions for the optimization of the device in the perspective of high throughput.Funding Agencies|PostDoc Latvia project [1.1.1.2/VIAA/1/16/024]</p

Some aspects of pulsed laser deposition of Si nanocrystalline films

Nanocrystalline silicon films were deposited by a picosecond laser ablation on different substrates in vacuum at room temperature. A nanocrystalline structure of the films was evidenced by atomic force microscopy (AFM), optical and Raman spectroscopies. A blue shift of the absorption edge was observed in optical absorption spectra, and a decrease of the optical phonon energy at the Brillouin zone centre was detected by Raman scattering. Early stages of nanocrystalline film formation on mica and HOPG substrates were studied by AFM. Mechanism of nanocrystal growth on substrate is discussed

Room temperature ferromagnetism in the nanolaminated MAX phase (Mn1−xCrx)2GaC

MAX phases are a class of intrinsically nanolaminated materials, which combine features of metals and ceramics, owing to the alternating metallic and covalent bonding between atomic layers. Magnetic MAX phases have been known for a decade, but ferromagnetism at room temperature in this highly anisotropic system has been elusive, limiting their value as magnets in practice. Here, we show that a MAX phase with a strong ferromagnetic response is obtained by substituting Mn with Cr on the M-site in the well-known Mn2GaC. The ferromagnetic response is observed in (Mn1−xCrx)2GaC with 0.06 < x < 0.29 up to temperatures well exceeding room temperature (489 K). The strongest magnetization is achieved with x = 0.12, reaching a saturation moment of 1.25 μB and a remanence of 0.67 μB per M-atom at 3 K and maintaining 0.90 and 0.44 μB per M-atom, respectively, at 300 K. This is the first experimental report of a significant ferromagnetic response in a MAX phase at room temperature. The results open the door to the use of MAX phases in a broad range of applications, from bulk magnets in power electronics to spintronic devices

High-power impulse magnetron sputter deposition of TiBx thin films : Effects of pulse length and peak current density

We report on a systematic study of the effect of pulse length (ton=25−200μs), and peak target current density (JT,peak=0.25−2.0A/cm2) during HiPIMS deposition of AlB2-phase TiBx thin films from a TiB2 target at a pressure of pAr=1.33Pa(10mTorr) and substrate temperature Ts=500°C. All films are under-stoichiometric with B/Ti = 1.36–1.89, with the higher values corresponding to longer pulses and higher JT,peak values. While the deposition flux, including both ions and neutrals, in general increases with increasing ton and JT,peak, the Ti+ ion flux saturates, resulting in the higher B/Ti values under these conditions. Thus, the relative amount of Ti ionization, and the degree to which these ions are guided toward the substrate by magnetic fields, are main modulators determining the composition of TiBx thin films

Synthesis and characterization of TiBx (1.2 ≤ x ≤ 2.8) thin films grown by DC magnetron co-sputtering from TiB2 and Ti targets

Titanium boride, TiBx, thin films were grown by direct current magnetron co-sputtering from a compound TiB2 target and a Ti target at an Ar pressure of 2.2 mTorr (0.3 Pa) and substrate temperature of 450 ?degrees C. While keeping the power of the TiB2 target constant at 250 W, and by varying the power on the Ti target, P-Ti, between 0 and 100 W, the B/Ti ratio in the film could be continuously and controllably varied from 1.2 to 2.8, with close-tostoichiometric diboride films achieved for P-Ti = 50 W. This was done without altering the deposition pressure, which is otherwise the main modulator for the composition of magnetron sputtered TiBx diboride thin films. The film structure and properties of the as-deposited films were compared to those after vacuum-annealing for 2 h at 1100 ?degrees C. As-deposited films consisted of small (?50 nm) randomly oriented TiB2 crystallites, interspersed in an amorphous, sometimes porous tissue phase. Upon annealing, some of the tissue phase crystallized, but the diboride average grain size did not change noticeably. The near-stoichiometric film had the lowest resistivity, 122 mu omega cm, after annealing. Although this film had growth-induced porosity, an interconnected network of elongated crystallites provides a path for conduction. All films exhibited high hardness, in the 25-30 GPa range, where the highest value of similar to 32 GPa was obtained for the most Ti-rich film after annealing. This film had the highest density and was nano-crystalline, where dislocation propagation is interrupted by the off-stoichiometric grain boundaries.Funding Agencies|Knut and Alice Wallenberg (KAW) FoundationKnut &amp; Alice Wallenberg Foundation [KAW 2015.0043]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [RIF14-0053, RIF 14-0074]; VRRFI [2017-00646_9]; electron microscopy laboratory in Linkoping</p