Gaugino Condensation and the Vacuum Expectation Value of the Dilaton

The mechanism of gaugino condensation has emerged as a prime candidate for supersymmetry breakdown in low energy effective supergravity (string) models. One of the open questions in this approach concerns the size of the gauge coupling constant which is dynamically fixed through the vev of the dilaton. We argue that a nontrivial gauge kinetic function $f(S)$ could solve the potential problem of a runaway dilaton. The actual form of $f(S)$ might be constrained by symmetry arguments.Comment: 10 pages, 1 postscript figure, uses eps

C+O detonations in thermonuclear supernovae: Interaction with previously burned material

In the context of explosion models for Type Ia Supernovae, we present one- and two-dimensional simulations of fully resolved detonation fronts in degenerate C+O White Dwarf matter including clumps of previously burned material. The ability of detonations to survive the passage through sheets of nuclear ashes is tested as a function of the width and composition of the ash region. We show that detonation fronts are quenched by microscopically thin obstacles with little sensitivity to the exact ash composition. Front-tracking models for detonations in macroscopic explosion simulations need to include this effect in order to predict the amount of unburned material in delayed detonation scenarios.Comment: 6 pages, 9 figures, uses isotope.sty, accepted for publication in A&

The Divisibility Graph of finite groups of Lie Type

The Divisibility Graph of a finite group $G$ has vertex set the set of conjugacy class lengths of non-central elements in $G$ and two vertices are connected by an edge if one divides the other. We determine the connected components of the Divisibility Graph of the finite groups of Lie type in odd characteristic

Characterization of All-Chromium Tunnel Junctions and Single Electron Tunneling Devices Fabricated by Direct-Writing Multilayer Technique

We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the CrO_x tunnel barriers were formed in air under ambient conditions. From the experiments on single junctions, values for the effective barrier height and thickness were derived. For the Cr/CrO_x/Cr SET transistors we achieved minimal junction areas of 17 x 60 nm^2 using a scanning transmission electron microscope for the e-beam exposure on Si_3N_4 membrane substrate. We discuss the electrical performance of the transistor samples as well as their noise behavior.Comment: 19 pages, 9 figure

Single electron transistors with high quality superconducting niobium islands

Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and germanium, high quality niobium patterns with good superconducting properties and a gap energy of up to 2Delta = 2.5 meV for the niobium were achieved. The I(U) characteristics of the transistors show special features due to tunneling of single Cooper pairs and significant gate modulation in both the superconducting and the normal state.Comment: 4 pages, 4 figure

Aluminum Single Electron Transistors with Islands Isolated from a Substrate

The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island with a dielectric substrate in the set of Al transistors located on the same chip and having almost similar electric parameters. We have found that the smaller the contact area the lower the noise level of the transistor. The lowest noise value 8*10E-6 e/sqrt(Hz) at f = 10 Hz. has been measured in a stacked transistor with an island which was completely isolated from a substrate. Our measurements have unambiguously indicated that the dominant source of the background charge fluctuations is associated with a dielectric substrateComment: Review paper, latex, 10 pages, 7 figures, to be publ. in JLTP, 2000; Proceeding of "Electron Transport in Mesoscopic Systems", August 12-15, 1999 Geteborg, Sweden, http://fy.chalmers.se/meso_satellite/index.html See also LT22 manuscript: http://lt22.hut.fi/cgi/view?id=S1113