13 research outputs found
Experimental Study of Pressure Influence on Tunnel Transport into 2DEG
We present the concept and the results of pilot measurements of tunneling in
a system {Al/-GaAs} under pressure up to 2 GPa at 4.2 K. The
obtained results may indicate the following: the barrier height for
{Al/-GaAs} equals to 0.86 eV at P=0 and its pressure coefficient is ; charged impurity density in the delta-layer starts to drop from
down to at about 1.5
GPa; metal-insulator transition may occur in 2DEG at about 2 GPa