ПРИМЕНЕНИЕ АВТОМАТИЗИРОВАННОЙ ИНФОРМАЦИОННО-АНАЛИТИЧЕСКОЙ СИСТЕМЫ МОНИТОРИНГА ПОДГОТОВКИ НАУЧНЫХ РАБОТНИКОВ ВЫСШЕЙ КВАЛИФИКАЦИИ ДЛЯ АНАЛИЗА ДИНАМИКИ РАЗВИТИЯ ПОСЛЕВУЗОВСКОГО ОБРАЗОВАНИЯ В РЕСПУБЛИКЕ БЕЛАРУСЬ

The possibilities of the automated information-analytical system for monitoring the highest qualification scientific personnel training are presented. It is shown that the application of the above system allows to get information about the state of the highest qualification scientific personnel training in the Republic of Belarus, to perform the analysis of the dynamics of the postgraduate education development on a wide range of quantitative and qualitative indicators.Представлены возможности автоматизированной информационно-аналитической системы мониторинга подготовки научных работников высшей квалификации (АСМ НРВК). Показано, что применение АСМ НРВК позволяет получать оперативную информацию о состоянии подготовки научных работников высшей квалификации в Республике Беларусь, осуществлять анализ динамики развития послевузовского образования по широкому спектру количественных и качественных показателей

Role of gallium diffusion in the formation of a magnetically dead layer at the Y3Fe5O12/Gd3Ga5O12 epitaxial interface

We have clarified the origin of a magnetically dead interface layer formed in yttrium iron garnet (YIG) films grown at above 700 degrees C onto a gadolinium gallium garnet (GGG) substrate by means of laser molecular beam epitaxy. The diffusion-assisted formation of a Ga-rich region at the YIG/GGG interface is demonstrated by means of composition depth profiling performed by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and x-ray and neutron reflectometry. Our finding is in sharp contrast to the earlier expressed assumption that Gd acts as a migrant element in the YIG/GGG system. We further correlate the presence of a Ga-rich transition layer with considerable quenching of ferromagnetic resonance and spin wave propagation in thin YIG films. Finally, we clarify the origin of the enigmatic low-density overlayer that is often observed in neutron and x-ray reflectometry studies of the YIG/GGG epitaxial system

The diversity of microorganisms inhabiting the sludge tanks of Baikalsk pulp and paper plant (BPPP)

The wastes from the Baikalsk pulp and paper plant, including the by-products of the plant’s bleaching unit are stored in the special disposal reservoirs in the form of a sludge-lignin, which consists of lignin, polyacrylamide and flocculants. Here, we report on microbiological composition of sludge-lignin: we detected fungi hyphae, actinomycete hyphae, long and short rods as well as coccal forms of bacteria. Interestingly, despite the diversity of bacterial, cyanobacterial and fungal communities no noticeable destruction of lignin was observed. We recommend to use specific chemical compounds and microbiological agents for destruction of sludge-lignin

Unveiling structural, chemical and magnetic interfacial peculiarities in ?-Fe2O3/GaN (0001) epitaxial films

10.1038/s41598-018-25849-zScientific Reports81874

Calcium fluoride on Si(001): adsorption mechanisms and epitaxial growth modes

Growth of CaF2 on Si(001) is studied as a function of the substrate temperature during deposition for coverages from fraction of a monolayer (ML) up to several monolayers. Structural and morphological studies using atomic force microscopy, low-energy electron diffraction, and reflection high-energy electron diffraction are combined with measurements of core-level photoemission and x-ray absorption. Bonding between CaF2 molecules and Si(001) substrates is followed by monitoring core-level shifts and x-ray absorption line shape. It is found that a dissociative reaction occurs at high deposition temperatures (similar to 750 degrees C), giving rise to a 1-ML-thick uniform wetting layer, which is bonded with the substrate through Ca atoms. This wetting layer changes the surface periodicity from double domain 2x1+1x2 to single domain 3x1. Three-dimensional CaF2 elongated islands develop on top of the wetting layer, with their (110) planes parallel to the Si surface plane. At temperatures below 600 degrees C no dissociative reaction takes place for CaF2; nanodimensional islands develop in the form of rectangular-based huts. The crystallographic orientation of these islands is parallel to that of the Si(001) substrate. The data are compared to results obtained on CaF2 deposited on Si(111)

Structural and photoemission studies of SrF2 adsorption on Si(001)

The growth modes of SrF2 on Si(001) are investigated by AFM and ultraviolet photoemission. Two growth regimes are identified according to the substrate temperature during deposition, resulting in flat and ordered fluoride layers or in nano-patterned films with characteristic triangular islands. The flat layer growth obtained at high temperature is accompanied by molecular dissociation at the interface

Cobalt on calcium fluoride: Initial stages of growth and magnetic properties

Epitaxial cobalt films on CaF2(1 1 0) buffer layers on Si(0 0 1) were grown by molecular beam epitaxy. It is found that Co grows in a face-centered cubic lattice forming nanodimensional islands. The islands tend to align along the parallel grooves which characterize the self-patterned CaF2(1 1 0) surface grown on Si(0 0 1). Photoemission was used to probe the uniformity of the film and the occurrence of chemical reactions with the substrate. X-ray magnetic circular dichroism at the Co L2,3 edges was used to access the magnetic properties of the films. The thick Co film presents an in-plane easy magnetization axis along the directions of the grooves of the CaF2(1 1 0) surface