234 research outputs found
Electric field gradients in s-, p- and d-metal diborides and the effect of pressure on the band structure and T in MgB
Results of FLMTO-GGA (full-potential linear muffin-tin orbital -- generalized
gradient approximation) calculations of the band structure and boron electric
field gradients (EFG) for the new medium-T superconductor (MTSC), MgB,
and related diborides MB, M=Be, Al, Sc, Ti, V, Cr, Mo and Ta are reported.
The boron EFG variations are found to be related to specific features of their
band structure and particularly to the M-B hybridization. The strong charge
anisotropy at the B site in MgB is completely defined by the valence
electrons - a property which sets MgB apart from other diborides. The boron
EFG in MgB is weakly dependent of applied pressure: the B p electron
anisotropy increases with pressure, but it is partly compensated by the
increase of core charge assymetry. The concentration of holes in bonding
bands is found to decrease slightly from 0.067 to 0.062 holes/B under
a pressure of 10 GPa. Despite a small decrease of N(E), the Hopfield
parameter increases with pressure and we believe that the main reason for the
reduction under pressure of the superconducting transition temperature, T,
is the strong pressure dependence of phonon frequencies, which is sufficient to
compensate the electronic effects.Comment: 12 pages, 3 figure
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