Large Magnetic Susceptibility Anisotropy of Metallic Carbon Nanotubes

Through magnetic linear dichroism spectroscopy, the magnetic susceptibility anisotropy of metallic single-walled carbon nanotubes has been extracted and found to be 2-4 times greater than values for semiconducting single-walled carbon nanotubes. This large anisotropy is consistent with our calculations and can be understood in terms of large orbital paramagnetism of electrons in metallic nanotubes arising from the Aharonov-Bohm-phase-induced gap opening in a parallel field. We also compare our values with previous work for semiconducting nanotubes, which confirm a break from the prediction that the magnetic susceptibility anisotropy increases linearly with the diameter.Comment: 4 pages, 4 figure

Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface

Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear

Terahertz magneto-spectroscopy of transient plasmas in semiconductors

Using synchronized near-infrared (NIR) and terahertz (THz) lasers, we have performed picosecond time-resolved THz spectroscopy of transient carriers in semiconductors. Specifically, we measured the temporal evolution of THz transmission and reflectivity after NIR excitation. We systematically investigated transient carrier relaxation in GaAs and InSb with varying NIR intensities and magnetic fields. Using this information, we were able to determine the evolution of the THz absorption to study the dynamics of photocreated carriers. We developed a theory based on a Drude conductivity with time-dependent density and density-dependent scattering lifetime, which successfully reproduced the observed plasma dynamics. Detailed comparison between experimental and theoretical results revealed a linear dependence of the scattering frequency on density, which suggests that electron-electron scattering is the dominant scattering mechanism for determining the scattering time. In InSb, plasma dynamics was dramatically modified by the application of a magnetic field, showing rich magneto-reflection spectra, while GaAs did not show any significant magnetic field dependence. We attribute this to the small effective masses of the carriers in InSb compared to GaAs, which made the plasma, cyclotron, and photon energies all comparable in the density, magnetic field, and wavelength ranges of the current study.Comment: 8 pages, 9 figures, submitted to Phys. Rev.