Debye relaxation in high magnetic fields

Dielectric relaxation is universal in characterizing polar liquids and solids, insulators, and semiconductors, and the theoretical models are well developed. However, in high magnetic fields, previously unknown aspects of dielectric relaxation can be revealed and exploited. Here, we report low temperature dielectric relaxation measurements in lightly doped silicon in high dc magnetic fields B both parallel and perpendicular to the applied ac electric field E. For B//E, we observe a temperature and magnetic field dependent dielectric dispersion e(w)characteristic of conventional Debye relaxation where the free carrier concentration is dependent on thermal dopant ionization, magnetic freeze-out, and/or magnetic localization effects. However, for BperpE, anomalous dispersion emerges in e(w) with increasing magnetic field. It is shown that the Debye formalism can be simply extended by adding the Lorentz force to describe the general response of a dielectric in crossed magnetic and electric fields. Moreover, we predict and observe a new transverse dielectric response EH perp B perp E not previously described in magneto-dielectric measurements. The new formalism allows the determination of the mobility and the ability to discriminate between magnetic localization/freeze out and Lorentz force effects in the magneto-dielectric response.Comment: 19 pages, 6 figure

Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}

Shubnikov-de Haas and angular dependent magnetoresistance oscillations have been used to explore the role of anion size, magnetic moment, and disorder in the organic conductors kappa-(BETS)_2GaBr_{4} and kappa-(BETS)_2FeCl_{2}_Br_{2} in the isomorphic class kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}. The results, combined with previous work, show correlations between the anion composition (Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}) and the superconducting transition temperature, effective mass, Fermi surface topology, and the mean free path.Comment: 5 pages, 6 figure

Magnetic Frustration Driven by Itinerancy in Spinel CoV2O4

Localized spins and itinerant electrons rarely coexist in geometrically-frustrated spinel lattices. They exhibit a complex interplay between localized spins and itinerant electrons. In this paper, we study the origin of the unusual spin structure of the spinel CoV2O4, which stands at the crossover from insulating to itinerant behavior using the first principle calculation and neutron diffraction measurement. In contrast to the expected paramagnetism, localized spins supported by enhanced exchange couplings are frustrated by the effects of delocalized electrons. This frustration produces a non-collinear spin state even without orbital orderings and may be responsible for macroscopic spin-glass behavior. Competing phases can be uncovered by external perturbations such as pressure or magnetic field, which enhances the frustration

Deformation-Induced Phase Transformations in Gold Nanoribbons with the 4H Phase

The mechanical stability of metallic nanomaterials has been intensively studied due to their unique structures and promising applications. Although extensive investigations have been carried out on the deformation behaviors of metallic nanomaterials, the atomic-scale deformation mechanism of metallic nanomaterials with unconventional hexagonal structures remains unclear because of the lack of direct experimental observation. Here, we conduct an atomicresolution in situ tensile-straining transmission electron microscopy investigation on the deformation mechanism of gold nanoribbons with the 4H (hexagonal) phase. Our results reveal that plastic deformation in the 4H gold nanoribbons comprises three stages, in which both full and partial dislocations are involved. At the early deformation stage, plastic deformation is governed by full dislocation activities. Partial dislocations are subsequently activated in regions that have undergone full dislocation gliding, leading to phase transformation from the 4H phase to the face-centered cubic (FCC) phase. At the last stage of the deformation process, the volume fraction of the FCC phase increases, and full dislocation activities in the FCC regions also play an important role.Ade Kismarahardja, Zhanxin Wang, Dongwei Li, Lihua Wang, Libo Fu, Yujie Chen, Zhanxi Fan, Ye Chen, Xiaodong Han, Hua Zhang, and Xiaozhou Lia