Insulating and Conducting Phases of RbC60

Optical measurements were performed on thin films of Rb$_{x}$C$_{60}$, identified by X-ray diffraction as mostly $x=1$ material. The samples were subjected to various heat treatments, including quenching and slow cooling from 400K. The dramatic increase in the transmission of the quenched samples, and the relaxation towards the transmission observed in slow cooled samples provides direct evidence for the existence of a metastable insulating phase. Slow cooling results in a phase transition between two electrically conducting phases.Comment: Minor revisions. Submitted to PRB, RevTeX 3.0 file, 2 postscript figures included, ir_dop

On-chain electrodynamics of metallic (TMTSF)_2 X salts: Observation of Tomonaga-Luttinger liquid response

We have measured the electrodynamic response in the metallic state of three highly anisotropic conductors, (TMTSF)_2 X, where X=PF_6, AsF_6, or ClO_4, and TMTSF is the organic molecule tetramethyltetraselenofulvalene. In all three cases we find dramatic deviations from a simple Drude response. The optical conductivity has two features: a narrow mode at zero frequency, with a small spectral weight, and a mode centered around 200 cm^{-1}, with nearly all of the spectral weight expected for the relevant number of carriers and single particle bandmass. We argue that these features are characteristic of a nearly one-dimensional half- or quarter-filled band with Coulomb correlations, and evaluate the finite energy mode in terms of a one-dimensional Mott insulator. At high frequencies (\hbar\omega > t_\perp, the transfer integral perpendicular to the chains), the frequency dependence of the optical conductivity \sigma_1(\omega) is in agreement with calculations based on an interacting Tomonaga-Luttinger liquid, and is different from what is expected for an uncorrelated one-dimensional semiconductor. The zero frequency mode shows deviations from a simple Drude response, and can be adequately described with a frequency dependent mass and relaxation rate.Comment: 12 pages, 7 figures, RevTeX; minor corrections to text and references; To be published in Phys. Rev. B, 15 July 199

Variable-range hopping in quasi-one-dimensional electron crystals

We study the effect of impurities on the ground state and the low-temperature dc transport in a 1D chain and quasi-1D systems of many parallel chains. We assume that strong interactions impose a short-range periodicicity of the electron positions. The long-range order of such an electron crystal (or equivalently, a $4 k_F$ charge-density wave) is destroyed by impurities. The 3D array of chains behaves differently at large and at small impurity concentrations $N$. At large $N$, impurities divide the chains into metallic rods. The low-temperature conductivity is due to the variable-range hopping of electrons between the rods. It obeys the Efros-Shklovskii (ES) law and increases exponentially as $N$ decreases. When $N$ is small, the metallic-rod picture of the ground state survives only in the form of rare clusters of atypically short rods. They are the source of low-energy charge excitations. In the bulk the charge excitations are gapped and the electron crystal is pinned collectively. A strongly anisotropic screening of the Coulomb potential produces an unconventional linear in energy Coulomb gap and a new law of the variable-range hopping $-\ln\sigma \sim (T_1 / T)^{2/5}$. $T_1$ remains constant over a finite range of impurity concentrations. At smaller $N$ the 2/5-law is replaced by the Mott law, where the conductivity gets suppressed as $N$ goes down. Thus, the overall dependence of $\sigma$ on $N$ is nonmonotonic. In 1D, the granular-rod picture and the ES apply at all $N$. The conductivity decreases exponentially with $N$. Our theory provides a qualitative explanation for the transport in organic charge-density wave compounds.Comment: 20 pages, 7 figures. (v1) The abstract is abridged to 24 lines. For the full abstract, see the manuscript (v2) several changes in presentation per referee's comments. No change in result