8 research outputs found

    The pore-network modeling of gas-condensate flow: Elucidating the effect of pore morphology, wettability, interfacial tension, and flow rate

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    The gas-condensate flow in the near-well region is significantly influenced by phase behavior, flow regimes, and pore geometries. In conventional gas-condensate reservoirs the key pore-scale parameters affecting gas and condensate relative permeabilities include velocity (i.e., pressure gradient), interfacial tension (IFT), wettability, and pore structure. To examine the impact of these parameters, three-dimensional (3D) and two-dimensional (2D) pore-network models (PNMs) were developed. A proposed compositional model was used to implement the cyclic process of condensate corner flow (film flow for circular tubes) and condensate blockage. Response surface methodology (RSM) was employed to achieve high accuracy in phase equilibrium calculations and to enhance computational speed. The 3D PNM simulations of gas-condensate core-flood experiments confirmed the consistency and accuracy of the implemented methodology. A parametric study of governing factors such as pore shapes, wettability, IFT, and flow rate was conducted using the developed PNMs. The findings revealed that pore geometry and contact angle dictate the condensate meniscus curvature and snap-off process in pore throats. The unblocking of throats by condensate bridges was primarily controlled by contact angle, IFT, and pore cross-section. A shift to neutral wetting substantially improved gas-condensate flow in higher IFTs and angular pore shapes. The positive velocity effect on low-IFT gas-condensate flow, known as the coupling rate effect, was more pronounced in simulations with lower contact angles, and its impact was negligible at neutral wettability, similar to the IFT effect. The simulation results and findings underscore the influence of each factor and offer a method for incorporating the effects of pore shape (i.e., formation type and structure), contact angle, velocity, and IFT in continuum scale simulations

    Magnetic graphene/Ni-nano-crystal hybrid for small field magnetoresistive effect synthesized via electrochemical exfoliation/deposition technique

    No full text
    Two-dimensional heterostructures of graphene (Gr) and metal/semiconducting elements convey new direction in electronic devices. They can be useful for spintronics because of small spin orbit interaction of Gr as a non-magnetic metal host with promising electrochemical stability. In this paper, we demonstrate one-step fabrication of magnetic Ni-particles entrapped within Gr-flakes based on simultaneous electrochemical exfoliation/deposition procedure by two-electrode system using platinum as the cathode electrode and a graphite foil as the anode electrode. The final product is an air stable hybrid element including Gr flakes hosting magnetic Ni-nano-crystals showing superparamagnetic-like response and room temperature giant magnetoresistance (GMR) effect at small magnetic field range. The GMR effect is originated from spin scattering through ferromagnetic/non-magnetic nature of Ni/Gr heterostructure and interpreted based on a phenomenological spin transport model. Our work benefits from XRD, XPS, Raman, TEM, FTIR and VSM measurements We addressed that how our results can be used for rapid manufacturing of magnetic Gr for low field magneto resistive elements and potential printed spintronic devices

    Magnetic graphene/Ni-nano-crystal hybrid for small field magnetoresistive effect synthesized via electrochemical exfoliation/deposition technique

    No full text
    Two-dimensional heterostructures of graphene (Gr) and metal/semiconducting elements convey new direction in electronic devices. They can be useful for spintronics because of small spin orbit interaction of Gr as a non-magnetic metal host with promising electrochemical stability. In this paper, we demonstrate one-step fabrication of magnetic Ni-particles entrapped within Gr-flakes based on simultaneous electrochemical exfoliation/deposition procedure by two-electrode system using platinum as the cathode electrode and a graphite foil as the anode electrode. The final product is an air stable hybrid element including Gr flakes hosting magnetic Ni-nano-crystals showing superparamagnetic-like response and room temperature giant magnetoresistance (GMR) effect at small magnetic field range. The GMR effect is originated from spin scattering through ferromagnetic/non-magnetic nature of Ni/Gr heterostructure and interpreted based on a phenomenological spin transport model. Our work benefits from XRD, XPS, Raman, TEM, FTIR and VSM measurements We addressed that how our results can be used for rapid manufacturing of magnetic Gr for low field magneto resistive elements and potential printed spintronic devices

    Magnetic graphene/Ni-nano-crystal hybrid for small field magnetoresistive effect synthesized via electrochemical exfoliation/deposition technique

    No full text
    Two-dimensional heterostructures of graphene (Gr) and metal/semiconducting elements convey new direction in electronic devices. They can be useful for spintronics because of small spin orbit interaction of Gr as a non-magnetic metal host with promising electrochemical stability. In this paper, we demonstrate one-step fabrication of magnetic Ni-particles entrapped within Gr-flakes based on simultaneous electrochemical exfoliation/deposition procedure by two-electrode system using platinum as the cathode electrode and a graphite foil as the anode electrode. The final product is an air stable hybrid element including Gr flakes hosting magnetic Ni-nano-crystals showing superparamagnetic-like response and room temperature giant magnetoresistance (GMR) effect at small magnetic field range. The GMR effect is originated from spin scattering through ferromagnetic/non-magnetic nature of Ni/Gr heterostructure and interpreted based on a phenomenological spin transport model. Our work benefits from XRD, XPS, Raman, TEM, FTIR and VSM measurements We addressed that how our results can be used for rapid manufacturing of magnetic Gr for low field magneto resistive elements and potential printed spintronic devices
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