In Situ Growth Rate Measurement of Selective LPCVD of Tungsten

The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth

A novel approach to low-power hot-surface devices with decoupled electrical and thermal resistances

This work employs the idea of maintaining a hot surface by means of dissipating power at a nano-scale conductive link. The link is created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). From modelling, a link of 10 nm in diameter should be possible to maintain the surface temperature ranging between 750 and 1150 K within the surface diameter of 2 μm by absorbing a 3.3 mW of electric power. The devices can also be designed in such a way that the hot surface area is reduced to a sub-μm-size hotspot. The main advantage of the proposed idea is decoupling the electrical resistance and thermal resistance of the device. In this paper, two device structures based on antifuse technology are described. Both the thermo-electrical properties and feasibility to perform as a Pellistor-type gas sensor are discussed

Exploring The Relationship Between Receipt Of A Mississippi Need-Based State Grant And Grade Point Average Among Graduating Seniors At The University Of Mississippi

This dissertation in practice (DiP) studies the relationship between the receipt of the Mississippi Higher Education Legislative Plan for Needy Students (MS-HELP) Grant and cumulative grade point average (GPA) at the beginning of their graduating term among graduating senior students at the University of Mississippi (UM). This study relies on the metric of Expected Family Contribution (EFC), which is a dollar amount generated by the Free Application for Federal Student Aid (FAFSA) designed to measure the amount of money a household can reasonably be expected to contribute to higher education. The MS-HELP Grant is a need-based grant provided by the State of Mississippi for Mississippi-resident students with a Pell Grant-eligible EFC, at least a 2.5 cumulative GPA, and at least 15 hours of enrollment per semester, and at least a score of 20 on the ACT, the family must not exceed certain income and household limitations. MS-HELP Grant is a fall and spring semester-only award that one must apply and secure eligibility for within one year of graduating high school. Each year the award application deadline for the upcoming award year is March 31st which means first-time prospective freshmen applicants are still in high school when the award application deadline passes. This study utilized a data file from the University of Mississippi Office of Financial Aid of over 5,000 Mississippi resident graduating seniors from 2014 to 2019. After controls for EFC and GPA as described above were applied the number of students whose EFC and GPA met these thresholds resulted in a total of approximately 1,500 students to be examined. Cumulative GPA for MS-HELP Grant and non-MS-HELP Grant recipients with an EFC of $0-$5,500 were examined, then only those with a $0 EFC, next those with$1-$1,500 EFC, finally those with a$1,501-$5,500 EFC. Once mean GPA was established for each group a 2 sample z-test was employed to determine the significance of the difference in GPA to determine if there was or was not a significant in GPA between MS-HELP Grant recipients and non-recipients and if there was correlation to EFC. The findings reflected that receipt of MS-HELP Grant was most effective in terms of cumulative GPA among those demonstrating the highest financial need

Informationist Science Fiction Theory and Informationist Science Fiction

Informationist Science Fiction theory provides a way of analysing science fiction texts and narratives in order to demonstrate on an informational basis the uniqueness of science fiction proper as a mode of fiction writing. The theoretical framework presented can be applied to all types of written texts, including non-fictional texts. In "Informationist Science Fiction Theory and Informationist Science Fiction" the author applies the theoretical framework and its specific methods and principles to various contemporary science fiction works, including works by William Gibson, Neal Stephenson and Vernor Vinge. The theoretical framework introduces a new informational theoretic re-framing of existing science fiction literary theoretic posits such as Darko Suvin's novum, the mega-text as conceived of by Damien Broderick, and the work of Samuel R Delany in investigating the subjunctive mood in SF. An informational aesthetics of SF proper is established, and the influence of analytic philosophy - especially modal logic - is investigated. The materialist foundations of the metaphysical outlook of SF proper is investigated with a view to elucidating the importance of the relationship between scientific materialism and SF. SF is presented as The Fiction of Veridical, Counterfactual and Heterogeneous Information

Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution, the device fabrication process, working principle and properties will be discussed. Change in the interference fringe of the antifuse spectra has been measured due to the filling of the channel. Preliminary applications are electroosmotic flow speed measurement, detection of absorptivity of liquids in the channe

Low-temperature process steps for realization of non-volatile memory devices

In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the subsequent functional layers (e.g., gate oxide) can be done using CVD and ALD reactors in a cluster tool. We show that a high nanocrystal density (Si-NC), required for a good functionality of the memory device, can be obtained by using disilane (Si2H6) or trisilane (Si3H8, known as Silcore®) as precursors for LPCVD instead of silane, at a deposition temperature of 325 °C. The nanocrystals are encapsulated with an ALD-Al2O3 layer (deposited at 300 °C), which serves as oxidation barrier. The passivation of the realized structure is done with an ALD-TiN layer deposited at 425 °C. In this work, we realized Al/TiN/Al2O3/Si-NC/SiO2/Si(100) multilayer floating-gate structures, where the crystallized amorphous silicon film was for the time being replaced by a mono-crystalline silicon wafer, and the gate oxide was thermally grown instead of a low-temperature PECVD oxide. The structures were characterized in terms of their performance as memory cells. In addition, the feasibility to use laser crystallization for improving the amorphous silicon films (prior to the gate oxide deposition) was explored

Warren L. Holleman, PhD, Oral History Interview, April 12, 2017

Major Topics Covered: Personal background and education; interests in storytelling, playwriting Roles prior to coming to MD Anderson The Faculty Health and Wellbeing Program; offerings, analysis of, evolution of to support shared governance system Faculty Health and Wellbeing programs; Anti-Bullying Task Force; Faculty Health and Wellbeing Committee Needs of faculty at MD Anderson Faculty burnout MD Anderson work environment and work culture: changes to, challenges of Faculty morale under Ronald DePinho; resignation of Ronald DePinho; the transitional leadership team after the resignation; changes in progress during transitionhttps://openworks.mdanderson.org/mchv_interviewsessions/1144/thumbnail.jp

Warren L. Holleman, PhD, Oral History Interview, April 20, 2017

Major Topics Covered: Personal background and education; interests in storytelling, playwriting Roles prior to coming to MD Anderson The Faculty Health and Wellbeing Program; offerings, analysis of, evolution of to support shared governance system Faculty Health and Wellbeing programs; Anti-Bullying Task Force; Faculty Health and Wellbeing Committee Needs of faculty at MD Anderson Faculty burnout MD Anderson work environment and work culture: changes to, challenges of Faculty morale under Ronald DePinho; resignation of Ronald DePinho; the transitional leadership team after the resignation; changes in progress during transitionhttps://openworks.mdanderson.org/mchv_interviewsessions/1145/thumbnail.jp

Warren L. Holleman, PhD, Oral History Interview, April 27, 2017

Major Topics Covered: Personal background and education; interests in storytelling, playwriting Roles prior to coming to MD Anderson The Faculty Health and Wellbeing Program; offerings, analysis of, evolution of to support shared governance system Faculty Health and Wellbeing programs; Anti-Bullying Task Force; Faculty Health and Wellbeing Committee Needs of faculty at MD Anderson Faculty burnout MD Anderson work environment and work culture: changes to, challenges of Faculty morale under Ronald DePinho; resignation of Ronald DePinho; the transitional leadership team after the resignation; changes in progress during transitionhttps://openworks.mdanderson.org/mchv_interviewsessions/1146/thumbnail.jp

Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses

Silicon nanometer-scale diodes have been fabricated to emit light in the visible range at low power consumption. Such structures are candidates for emitter elements in Si-based optical interconnect schemes. Spectral measurements of Electroluminescence (EL) on the reverse-biased nanometer-scale diodes brought into breakdown have been carried out over the photon energy range of 1.4-2.8 eV. Previously proposed mechanisms for avalanche emission from conventional silicon p-n junctions are discussed in order to understand the origin of the emission. Also the stability of the diodes has been tested. Results indicate that our nanometer-scale diodes are basically high quality devices. Furthermore due to the nanometer-scale dimensions, very high electrical fields and current densities are possible at low power consumption. This makes these diodes an excellent candidate to be utilized as a light source in Si-based sensors and actuator application