Vortex configurations and dynamics in elliptical pinning sites for high matching fields

Using numerical simulations we study the configurations, dynamics, and melting properties of vortex lattices interacting with elliptical pinning sites at integer matching fields with as many as 27 vortices per pin. Our pinning model is based on a recently produced experimental system [G. Karapetrov et al., Phys. Rev. Lett. 95, 167002 (2005)], and the vortex configurations we obtain match well with experimental vortex images from the same system. We find that the strong pinning sites capture more than one vortex each, and that the saturation number of vortices residing in a pin increases with applied field due to the pressure from the surrounding vortices. At high matching fields, the vortices in the intestitial regions form a disordered triangular lattice. We measure the depinning thresholds for both the x and y directions, and find distinctive dynamical responses along with highly anisotropic thresholds. For melting of the vortex configurations under zero applied current, we find multi-step melting transitions in which the interstitial vortices melt at a much lower temperature than the pinned vortices. We associate this with signatures in the specific heat.Comment: 11 pages, 13 postscript figure

Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.Comment: 5 pages, 3 figures, 1 tabl

Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges

The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phase separation into coexisting ferromagnetic metallic and antiferromagnetic insulating (AFI) regions. Fabricating bridges with widths smaller than the phase separation length scale has allowed us to probe the magnetic properties of individual phase separated regions. We observe tunneling magnetoresistance across naturally occurring AFI tunnel barriers separating adjacent ferromagnetic regions spanning the width of the bridges. Further, near the Curie temperature, a magnetic field induced metal-to-insulator transition among a discrete number of regions within the narrow bridges gives rise to abrupt and colossal low-field magnetoresistance steps at well defined switching fields.Comment: 13 pages, 3 figures, submitted to Applied Physics Letter

Unusual Shubnikov-de Haas oscillations in BiTeCl

We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, $F_{1}=65 \pm 4$ Tesla and $F_{2}=156 \pm 5$ Tesla. We also measured the infrared optical reflectance $\left(\cal R(\omega)\right)$ and Hall effect; we propose that the two frequencies correspond respectively to the inner and outer Fermi sheets of the Rashba spin-split bulk conduction band. The bulk carrier concentration was $n_{e}\approx1\times10^{19}$ cm$^{-3}$ and the effective masses $m_{1}^{*}=0.20 m_{0}$ for the inner and $m_{2}^{*}=0.27 m_{0}$ for the outer sheet. Surprisingly, despite its low effective mass, we found that the amplitude of $F_{2}$ is very rapidly suppressed with increasing temperature, being almost undetectable above $T\approx4$ K