7 research outputs found
Photoconductivity and luminescence in GaSe crystals at high levels of optical excitation
Special Features of the Optical Absorption and Photoconductivity of Indium Monoselenide Upon Laser Excitation
Background impurities and a delta-doped QW. Part I: Center doping
The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-layer. The delta-layer impurity binding energy as well as the energy differences between the first quantized electron subbands in the well demonstrate a significant dependence on the characteristics of the background doping. Therefore, the background doping cannot be neglected when studying phenomena like intersubband optical transitions. © 2019 IOP Publishing Ltd