Kondo Temperature for the Two-Channel Kondo Models of Tunneling Centers

The possibility for a two-channel Kondo ($2CK$) non Fermi liquid state to appear in a metal as a result of the interaction between electrons and movable structural defects is revisited. As usual, the defect is modeled by a heavy particle moving in an almost symmetric double-well potential (DWP). Taking into account only the two lowest states in DWP is known to lead to a Kondo-like Hamiltonian with rather low Kondo temperature, $T_K$. We prove that, in contrast to previous believes, the contribution of higher excited states in DWP does not enhance $T_K$. On the contrary, $T_K$ is reduced by three orders of magnitude as compared with the two-level model: the prefactor in $T_K$ is determined by the spacing between the second and the third levels in DWP rather than by the electron Fermi energy. Moreover, $T_K$, turns out to be parametrically smaller than the splitting between the two lowest levels. Therefore, there is no microscopic model of movable defects which may justify non-Fermi liquid $2CK$ phenomenology.Comment: 5 pages, 4 .eps figure

Kondo Effect in Systems with Spin Disorder

We consider the role of static disorder in the spin sector of the one- and two-channel Kondo models. The distribution functions of the disorder-induced effective energy splitting between the two levels of the Kondo impurity are derived to the lowest order in the concentration of static scatterers. It is demonstrated that the distribution functions are strongly asymmetric, with the typical splitting being parametrically smaller than the average rms value. We employ the derived distribution function of splittings to study the temperature dependence of the low-temperature conductance of a sample containing an ensemble of two-channel Kondo impurities. The results are used to analyze the consistency of the two-channel Kondo interpretation of the zero-bias anomalies observed in Cu/(Si:N)/Cu nanoconstrictions.Comment: 16 pages, 5 figures, REVTe

Two-Channel Kondo Physics from Tunnelling Impurities with Triangular Symmetry

Tunnelling impurities in metals have been known for some time to have the potential for exhibiting Kondo-like physics. However previous models based on an impurity hopping between two equivalent positions have run into trouble due to the existence of relevant operators that drive the system away from the non-Fermi-liquid Kondo fixed point. In the case of an impurity hopping among positions with higher symmetry, such as triangular symmetry, it is shown here that the non-Fermi-liquid behavior at low temperatures can be generic. Using various bosonization techniques, the fixed point is shown to be {\em stable}. However, unlike the conventional two-channel Kondo (2CK) model, it has {\em four} leading irrelevant operators, implying that while the form of the singular temperature dependence of physical quantities is similar to the 2CK model, there will not be simple universal amplitude ratios. The phase diagram of this system is analyzed and a critical manifold is found to separate the non-Fermi-liquid from a conventional Fermi liquid fixed point. Generalization to higher symmetries, such as cubic, and the possibility of physical realizations with dynamic Jahn-Teller impurities is discussed.Comment: 20 pages, 4 figures, RevTex format, submitted to Phys. Rev.

Low energy properties of M-state tunneling systems in metals: New candidates for non-Fermi-liquid systems

We construct a generalized multiplicative renormalization group transformation to study the low energy dynamics of a heavy particle tunneling among $M$ different positions and interacting with $N_f$ independent conduction electron channels. Using a $1/N_f$-expansion we show that this M-level scales towards a fixed point equivalent to the $N_f$ channel $SU(M) \times SU(N_f)$ Coqblin-Schrieffer model. Solving numerically the scaling equations we find that a realistic M-level system scales close to this fixed point (FP) and its Kondo temperature is in the experimentally observable range $1-10 K$.Comment: 11 Latex pages, to appear in Phys. Rev. Lett, Figures available from the author by reques

Effect of Finite Impurity Mass on the Anderson Orthogonality Catastrophe in One Dimension

A one-dimensional tight-binding Hamiltonian describes the evolution of a single impurity interacting locally with $N$ electrons. The impurity spectral function has a power-law singularity $A(\omega)\propto\mid\omega-\omega_0\mid^{-1+\beta}$ with the same exponent $\beta$ that characterizes the logarithmic decay of the quasiparticle weight $Z$ with the number of electrons $N$, $Z\propto N^{-\beta}$. The exponent $\beta$ is computed by (1) perturbation theory in the interaction strength and (2) numerical evaluations with exact results for small systems and variational results for larger systems. A nonanalytical behavior of $\beta$ is observed in the limit of infinite impurity mass. For large interaction strength, the exponent depends strongly on the mass of the impurity in contrast to the perturbative result.Comment: 26 pages, RevTeX, 7 figures included, to be published in Phys. Rev.

Research Update: Electron beam-based metrology after CMOS

The magnitudes of the challenges facing electron-based metrology for post-CMOS technology are reviewed. Directed self-assembly, nanophotonics/plasmonics, and resistive switches and selectors are examined as exemplars of important post-CMOS technologies. Materials, devices, and architectures emerging from these technologies pose new metrology requirements: defect detection, possibly subsurface, in soft materials, accurate measurement of size, shape, and roughness of structures for nanophotonic devices, contamination-free measurement of surface-sensitive structures, and identification of subtle structural, chemical, or electronic changes of state associated with switching in non-volatile memory elements. Electron-beam techniques are examined in the light of these emerging requirements. The strong electron-matter interaction provides measurable signals from small sample features, rendering electron-beam methods more suitable than most for nanometer-scale metrology, but as is to be expected, solutions to many of the measurement challenges are yet to be demonstrated. The seeds of possible solutions are identified when they are available